The MB85R256FPF-G-BNDE1 is a 256kB Ferroelectric Random Access Memory (FRAM) chip in a configuration of 32768 words x 8-bit, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. The MB85R256F is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85R256F can be used for 101? read/write operations, which is a significant improvement over the number of read and write operations supported by flash memory and E2PROM.
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