The MB85R1001ANC-GE1 is a 1MB Ferroelectric Random Access Memory (FRAM) chip consisting of 131072 words x 8-bit of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process technologies. The MB85R1001A is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85R1001A can be used for 101? read/write operations, which is a significant improvement over the number of read and write operations supported by flash memory and E2PROM. The MB85R1001A uses a pseudo-SRAM interface that is compatible with conventional asynchronous SRAM.
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