The NDS352AP is a P-channel Logic Level Enhancement Mode Power Field Effect Transistor produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device is particularly suited for low voltage applications where fast high-side switching and low in-line power loss are needed in a very small outline surface mount package.
High density cell design for extremely low RDS (ON)
Exceptional on-resistance and maximum DC current capability
(EN)
