The H11G2M is a 80V 6-pin DIP high voltage photodarlington-type Optically Coupled Optocoupler consist of gallium arsenide infrared emitting diode coupled with a silicon Darlington connected phototransistor which has an integral base-emitter resistor to optimize elevated temperature characteristics.
- High sensitivity to low input current (minimum 500% CTR at IF= 1mA)
- Low leakage current at elevated temperature (maximum 100μA at 80°C)
消费电子产品, 电机驱动与控制, 通信与网络, 传感与仪器, 电源管理
