The FDV301N is a 25V N-channel Digital Field Effect Transistor produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. It has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one N-channel FET can replace several different digital transistors, with different bias resistor values. This product is general usage and suitable for many different applications.
Very low level gate drive requirements allowing direct operation in 3V circuits (VGS(th)<1.06V)
Gate-source Zener for ESD ruggedness (>6kV human body model)
Replace multiple NPN digital transistors with one DMOS FET
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