The FDS6930B is a dual N-channel Logic Level MOSFET produced using Fairchild Semiconductor's advanced Power Trench? process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Fast switching speed
Low gate charge
High performance trench technology for extremely low RDS (ON)
High power and current handling capability
-55 to 150°C Junction and storage temperature range
(EN)
