FDP61N20 -

晶体管, MOSFET, N沟道, 61 A, 200 V, 0.034 ohm, 10 V, 5 V

声明：图片仅供参考，请以实物为准！

制造商：: ON SEMICONDUCTOR/FAIRCHILD ON SEMICONDUCTOR/FAIRCHILD
制造商产品编号：: FDP61N20
仓库库存编号：: 1228360
技术数据表：: (EN)

订购热线： 400-900-3095 0755-21000796, QQ:800152669, Email:sales@szcwdz.com

由于产品数据库庞大，部分产品信息可能未能及时更新，下单前请与销售人员确认好实时在库数量，谢谢合作！

FDP61N20产品概述

The FDP61N20 is a 200V N-channel UniFET? MOSFET based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance and to provide better switching performance and higher avalanche energy strength. The body diode's reverse recovery performance of UniFET FRFET? MOSFET has been enhanced by lifetime control. Its trr is less than 100ns and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200ns and 4.5V/ns respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET's body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. This product is general usage and suitable for many different applications.

Low gate charge
100% Avalanche tested

电源管理, 照明

晶体管极性	N沟道
电流, Id 连续	61A
漏源电压, Vds	200V
在电阻RDS（上）	0.034ohm
电压 @ Rds测量	10V
阈值电压 Vgs	5V
功耗 Pd	417W
晶体管封装类型	TO-220
针脚数	3引脚
工作温度最高值	150°C
产品范围	-
汽车质量标准	-
MSL	-
关键词

FDP61N20 -

晶体管, MOSFET, N沟道, 61 A, 200 V, 0.034 ohm, 10 V, 5 V

FDP61N20产品概述

FDP61N20产品信息

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