The FDN352AP is a P-channel Logic Level MOSFET produced using Fairchild Semiconductor advanced Power Trench? process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. This device is well suited for low voltage and battery powered applications where low in-line power loss is needed in a very small outline surface mount package.
High performance trench technology for extremely low RDS (ON)
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