BS170_D26Z,2453384,晶体管, MOSFET, N沟道, 500 mA, 60 V, 1.2 ohm, 10 V, 2.1 V,ON SEMICONDUCTOR/FAIRCHILD

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BS170_D26Z -

晶体管, MOSFET, N沟道, 500 mA, 60 V, 1.2 ohm, 10 V, 2.1 V

声明：图片仅供参考，请以实物为准！

制造商：: ON SEMICONDUCTOR/FAIRCHILD ON SEMICONDUCTOR/FAIRCHILD
制造商产品编号：: BS170_D26Z
仓库库存编号：: 2453384
技术数据表：: (EN)

订购热线： 400-900-3095 0755-21000796, QQ:800152669, Email:sales@szcwdz.com

由于产品数据库庞大，部分产品信息可能未能及时更新，下单前请与销售人员确认好实时在库数量，谢谢合作！

BS170_D26Z产品概述

The BS170_D26Z is a 60V N-channel enhancement mode Field Effect Transistor produced using Fairchild's proprietary, high cell density, DMOS technology. This device has been designed to minimize on-state resistance while providing rugged, reliable and fast switching performance. This can be used in most applications requiring up to 500mA DC. It is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers and other switching applications. This product is general usage and suitable for many different applications.

High density cell design for low RDS (ON)
Voltage controlled small signal switch
Rugged and reliable
High saturation current capability
60V Drain gate voltage (VDGR)
±20V Continuous gate source voltage (VGSS)
150°C/W Thermal resistance, junction to ambient

工业, 电机驱动与控制, 电源管理

BS170_D26Z产品信息

邮箱：sales@szcwdz.com
Q Q：800152669
手机网站：m.szcwdz.com

BS170_D26Z产地与重量

原产地：: United States
进行最后一道重要生产流程所在的国家
RoHS 合规：: 是
税则号：: 85412100
重量（千克）：: .000286

美国1号品牌选型新加坡2号品牌选型

英国2号品牌选型英国10号品牌选型

日本5号品牌选型

晶体管极性	N沟道
电流, Id 连续	500mA
漏源电压, Vds	60V
在电阻RDS（上）	1.2ohm
电压 @ Rds测量	10V
阈值电压 Vgs	2.1V
功耗 Pd	830mW
晶体管封装类型	TO-92
针脚数	3引脚
工作温度最高值	150°C
产品范围	-
汽车质量标准	-
MSL	MSL 1 -无限制
关键词

BS170_D26Z -

晶体管, MOSFET, N沟道, 500 mA, 60 V, 1.2 ohm, 10 V, 2.1 V

BS170_D26Z产品概述

BS170_D26Z产品信息

BS170_D26Z替代选择

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 500 mA, 60 V, 1.2 ohm, 10 V, 2.1 V

ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET, N沟道

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 500 mA, 60 V, 1.2 ohm, 10 V, 2.1 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 500 mA, 60 V, 1.2 ohm, 10 V, 2.1 V

BS170_D26Z相关搜索

BS170_D26Z产地与重量

BS170_D26Z -

晶体管, MOSFET, N沟道, 500 mA, 60 V, 1.2 ohm, 10 V, 2.1 V

BS170_D26Z产品概述

BS170_D26Z产品信息

BS170_D26Z替代选择

ON SEMICONDUCTOR/FAIRCHILD 晶体管, MOSFET, N沟道, 500 mA, 60 V, 1.2 ohm, 10 V, 2.1 V

ON SEMICONDUCTOR/FAIRCHILD 场效应管, MOSFET, N沟道

ON SEMICONDUCTOR/FAIRCHILD 晶体管, MOSFET, N沟道, 500 mA, 60 V, 1.2 ohm, 10 V, 2.1 V

ON SEMICONDUCTOR/FAIRCHILD 晶体管, MOSFET, N沟道, 500 mA, 60 V, 1.2 ohm, 10 V, 2.1 V

BS170_D26Z相关搜索

BS170_D26Z产地与重量

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 500 mA, 60 V, 1.2 ohm, 10 V, 2.1 V

ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET, N沟道

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 500 mA, 60 V, 1.2 ohm, 10 V, 2.1 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 500 mA, 60 V, 1.2 ohm, 10 V, 2.1 V