VISHAY
场效应管, MOSFET, P沟道
ON SEMICONDUCTOR
单晶体管 双极, PNP, -40 V, 100 MHz, 710 mW, -2 A, 150 hFE
ROHM
双路场效应管, MOSFET, 双N沟道, 1 A, 30 V, 364 mohm, 4.5 V, 1.5 V
NEXPERIA
场效应管, MOSFET, P 通道, -20V, -3.9A, 3-SOT-23
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 750 mA, 20 V, 0.075 ohm, 10 V, 1.7 V
ON SEMICONDUCTOR
小信号二极管
ROHM
晶体管 双极预偏置/数字, AEC-Q101, 单路PNP, -50 V, -100 mA, 10 kohm, 10 kohm, 1 电阻比率
DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -35 mA, -200 V, 80 ohm, -10 V, -1.5 V
NEXPERIA
单晶体管 双极, NPN, 100 V, 110 MHz, 700 mW, 5.1 A, 30 hFE
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -12 A, -60 V, 0.11 ohm, -10 V, -4 V
VISHAY
标准功率二极管, 1.3 kV, 3 A, 单, 1.1 V, 3 μs, 150 A
INFINEON
晶体管, MOSFET, N沟道, 10 A, 100 V, 185 mohm, 10 V, 2 V
ON SEMICONDUCTOR
Bipolar Transistor Array, Dual PNP, -45 V, 380 mW, -100 mA, 220 hFE, SOT-363
STMICROELECTRONICS
快速/超快功率二极管, 1 kV, 3 A, 单, 1.7 V, 75 ns, 55 A
MICRO COMMERCIAL COMPONENTS
场效应管, 双路, N通道, MOSFET, 60V, 115MA, SOT-3
VISHAY
齐纳二极管, 500mW, 6.2V, DO-35
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, DUAL N CHANNEL, 20V, 0.16OHM, 1.2A, SC-70-6
VISHAY
快速二极管, 3A, 200V, DO-214AB
ON SEMICONDUCTOR
射频双极晶体管
DIODES INC.
单晶体管 双极, NPN, 400 V, 40 MHz, 1.5 W, 500 mA, 180 hFE
DIODES INC.
单管二极管 齐纳, 36 V, 500 mW, SOD-123, 5 %, 2 引脚, 150 °C
INFINEON
功率场效应管, MOSFET, N沟道, 4.5 A, 650 V, 0.85 ohm, 10 V, 3 V
VISHAY
单管二极管 齐纳, 24 V, 1 W, DO-213AB, 5 %, 2 引脚, 175 °C