STMICROELECTRONICS
Silicon Carbide Schottky Diode, 650V Series, Single, 650 V, 6 A, 18 nC, TO-252
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 48 A, 30 V, 0.007 ohm, 10 V, 1.7 V
DIODES INC.
晶体管, MOSFET, P沟道, -60 A, -30 V, 0.0057 ohm, -10 V, -1.6 V
INFINEON
功率场效应管, MOSFET, N沟道, 8.5 A, 700 V, 0.49 ohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, N沟道, 17 A, 100 V, 0.105 ohm, 10 V, 2 V
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -12 A, -60 V, 0.155 ohm, -10 V, -2.8 V
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 35 A, 30 V, 1.2 mohm, 8 V, 1.1 V
DIODES INC.
二极管 桥式整流, 单相, 200 V, 400 mA, SMD, 1 V, 4 引脚
ON SEMICONDUCTOR
肖特基整流器, 20 V, 3 A, 单, DO-214AB, 2 引脚, 500 mV
ON SEMICONDUCTOR
单晶体管 双极, NPN, 40 V, 150 MHz, 540 mW, 4 A, 370 hFE
NEXPERIA
晶体管, MOSFET, P沟道, -5.7 A, -20 V, 0.041 ohm, -4.5 V, -1 V
NEXPERIA
单晶体管 双极, NPN, 40 V, 200 MHz, 1.15 W, 600 mA, 100 hFE
DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -5 A, -30 V, 0.045 ohm, -10 V, -1 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 35 A, 25 V, 0.0116 ohm, 10 V, 1.5 V
DIODES INC.
双路场效应管, MOSFET, 双N沟道, 1.8 A, 60 V, 0.15 ohm, 5 V, 1 V
NXP
可变电容二极管, 变容, 102 pF, 20 mA, 15 V, 125 °C, SOT-23, 3引脚
DIODES INC.
晶体管, MOSFET, N沟道, 24 A, 60 V, 0.034 ohm, 10 V, 3 V
INFINEON
功率场效应管, MOSFET, N沟道, 10.5 A, 700 V, 0.54 ohm, 10 V, 3 V
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 101 A, 40 V, 0.0036 ohm, 10 V, 3.5 V
STMICROELECTRONICS
肖特基整流器, 200 V, 2 A, 单, DO-214AA, 2 引脚, 800 mV
ROHM
单管二极管 齐纳, 外延平面, 6.2 V, 200 mW, SOD-323F, 2 引脚, 150 °C
NEXPERIA
双极晶体管阵列, NPN, 30 V, 250 mW, 100 mA, 110 hFE, SOT-143
BOURNS
二极管 桥式整流, 单相, 1 kV, 4 A, SMD, 950 mV, 4 引脚