ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 21 A, 30 V, 28 mohm, 10 V, 1.7 V
PANASONIC ELECTRONIC COMPONENTS
单管二极管 齐纳, 10 V, 150 mW, SOD-523, 2 引脚, 150 °C
NEXPERIA
单晶体管 双极, NPN, PNP, -60 V, 150 MHz, 480 mW, -1.5 A, 285 hFE
VISHAY
晶体管, MOSFET, N沟道, 19 A, 200 V, 90 mohm, 10 V, 4 V
ROHM
单管二极管 齐纳, AEC-Q101, 2.7 V, 200 mW, SOD-323FL, 2 引脚, 150 °C
MULTICOMP
肖特基二极管, 3A, 20V, DO-201AD
INFINEON
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0012 ohm, 10 V, 2 V
INFINEON
晶体管, MOSFET, N沟道, 85 A, 40 V, 0.0018 ohm, 10 V, 2.2 V
VISHAY
场效应管, MOSFET, N沟道, 3.8W, 8-1212
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双P沟道, -1.5 A, -30 V, 0.458 ohm, -4 V, -2.6 V
NEXPERIA
单晶体管 双极, NPN, 80 V, 110 MHz, 700 mW, 5.1 A, 470 hFE
NEXPERIA
晶体管, MOSFET, N沟道, 70 A, 120 V, 0.0062 ohm, 10 V, 3 V
VISHAY
功率场效应管, MOSFET, N沟道, 33 A, 600 V, 0.083 ohm, 10 V, 2 V
DIODES INC.
单管二极管 齐纳, 3 V, 350 mW, SOT-23, 7 %, 3 引脚, 150 °C
ROHM
晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 2.2 kohm, 2.2 kohm, 1 电阻比率
VISHAY
标准功率二极管, 600 V, 1 A, 单, 1.1 V, 3 μs, 30 A
NEXPERIA
晶体管, MOSFET, P沟道, -3.2 A, -12 V, 0.059 ohm, -4.5 V, -680 mV
NEXPERIA
二极管 小信号, 单, 250 V, 200 mA, 1.25 V, 50 ns, 9 A
ON SEMICONDUCTOR
标准恢复二极管, 400 V, 3 A, 单, 1 V, 200 A
VISHAY
标准二极管, 1A, 400V, DO-214AC
ROHM
单管二极管 齐纳, AEC-Q101, 7.5 V, 200 mW, SOD-323FL, 2 引脚, 150 °C
VISHAY
晶体管, MOSFET, N沟道, 4.8 A, 200 V, 800 mohm, 10 V, 4 V
INFINEON
晶体管, MOSFET, N沟道, 160 A, 30 V, 3.1 mohm, 10 V, 1.9 V
MULTICOMP
晶体管, 单结(UJT), 2 A, 1 μA, 10 mA, TO-18, 3引脚, 125 °C