DIODES INC.
单晶体管 双极, NPN, PNP, 45 V, 300 MHz, 200 mW, -100 mA, 290 hFE
NEXPERIA
双极晶体管阵列, 双PNP, -60 V, 250 mW, -500 mA, 2000 hFE, SOT-23
INFINEON
晶体管 双极-射频, NPN, 4.5 V, 25 GHz, 160 mW, 35 mA, 95 hFE
ON SEMICONDUCTOR/FAIRCHILD
单管二极管 齐纳, 9.1 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
INFINEON
晶体管, MOSFET, N沟道, 10.8 A, 30 V, 0.011 ohm, 4.5 V, 3 V
VISHAY
晶体管, MOSFET, N沟道, 20 A, 200 V, 180 mohm, 10 V, 4 V
STMICROELECTRONICS
三端双向可控硅, 600 V, 50 mA, 1 W, 1.5 V, TOP-3, 250 A
INFINEON
晶体管, MOSFET, N沟道, 39 A, 80 V, 0.0225 ohm, 10 V, 2.5 V
PANASONIC ELECTRONIC COMPONENTS
DIODE, ULTRAFAST RECOVERY, 1A, 30V, SMINI2-F5-B
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, PowerTrench, 双N沟道, 66 A, 80 V, 0.0033 ohm, 10 V, 3 V
MICRO COMMERCIAL COMPONENTS
开关二极管, 120V, SOD-323
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.1 A, 200 V, 0.605 ohm, 10 V, 4 V
VISHAY
肖特基整流器, 单, 100 V, 3 A, DO-201AD, 2 引脚, 800 mV
INFINEON
晶体管 双极-射频, NPN, 15 V, 5 GHz, 280 mW, 45 mA, 70 hFE
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 350 mA, -20 V, 0.5 ohm, -4.5 V, -1 V
NEXPERIA
晶体管, MOSFET, N沟道, 59 A, 60 V, 8 mohm, 10 V, 3 V
NEXPERIA
晶体管, MOSFET, N沟道, 2.1 A, 60 V, 0.096 ohm, 10 V, 1.7 V
INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 35 A, 100 V, 0.0225 ohm, 10 V, 4 V
ON SEMICONDUCTOR/FAIRCHILD
SMALL SIGNAL DIODE 200V 200mA DO-35
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 10 V, 150 MHz, 750 mW, 2 A, 200 hFE
NEXPERIA
二极管 小信号, 单, 50 V, 215 mA, 1.25 V, 4 ns, 4 A
INFINEON
快速/超快功率二极管, 600 V, 8 A, 单, 1.7 V, 55 ns, 60 A
ON SEMICONDUCTOR
双路场效应管, MOSFET, N和P沟道, 2 A, 20 V, 0.105 ohm, 4.5 V, 1.3 V
NEXPERIA
晶体管, BISS型, 高电压, NPN, 400V, 500mA, 4-SOT-223