产品分类：半导体 - 分立器件,规格：晶体管极性 双N沟道,
INFINEON
双路场效应管, MOSFET, 双N沟道, 6.6 A, 20 V, 29 mohm, 4.5 V, 700 mV
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 160 A, 40 V, 0.0036 ohm, 10 V, 2 V
(EN)
ROHM
双路场效应管, MOSFET, 双N沟道, 200 mA, 50 V, 1.6 ohm, 4.5 V, 800 mV
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 4.5 A, 30 V, 0.02 ohm, 10 V, 2.2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 680 mA, 25 V, 450 mohm, 4.5 V, 800 mV
(EN)ROHM
双路场效应管, MOSFET, 双N沟道, 3.4 A, 80 V, 0.09 ohm, 10 V, 2.5 V
(EN)
ROHM
双路场效应管, MOSFET, 双N沟道, 3.5 A, 30 V, 0.038 ohm, 4.5 V, 1.5 V
(EN)
ROHM
双路场效应管, MOSFET, 双N沟道, 3.4 A, 80 V, 0.09 ohm, 10 V, 2.5 V
(EN)ROHM
双路场效应管, MOSFET, 双N沟道, 4.5 A, 30 V, 0.025 ohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 6.9 A, 30 V, 27 mohm, 10 V, 1.9 V
(EN)ROHM
双路场效应管, MOSFET, 双N沟道, 2 A, 100 V, 0.24 ohm, 10 V, 2.5 V
(EN)
SEMIKRON
晶体管, IGBT阵列&模块, 双N沟道, 612 A, 1.75 V, 1.2 kV, Module
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 6 A, 30 V, 0.0183 ohm, 10 V, 2.1 V
(EN)ROHM
双路场效应管, MOSFET, 双N沟道, 6 A, 40 V, 0.027 ohm, 10 V, 2.5 V
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 8.1 A, 30 V, 0.014 ohm, 4.5 V, 1.1 V
(EN)
ROHM
双路场效应管, MOSFET, 双N沟道, 2.5 A, 30 V, 0.065 ohm, 4.5 V, 1.5 V
(EN)ROHM
双路场效应管, MOSFET, 双N沟道, 200 mA, 50 V, 1.6 ohm, 4.5 V, 800 mV
(EN)ROHM
双路场效应管, MOSFET, 双N沟道, 6 A, 45 V, 0.018 ohm, 10 V, 2.5 V
(EN)
NEXPERIA
双路场效应管, MOSFET, 双N沟道, 200 mA, 30 V, 2.7 ohm, 10 V, 1.2 V
(EN)ROHM
双路场效应管, MOSFET, 双N沟道, 4.5 A, 60 V, 0.046 ohm, 10 V, 2.5 V
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 4.9 A, 30 V, 0.05 ohm, 10 V, 1 V
(EN)ROHM
双路场效应管, MOSFET, 双N沟道, 9 A, 30 V, 0.0125 ohm, 4.5 V, 1.5 V
(EN)
SEMIKRON
晶体管, IGBT阵列&模块, 双N沟道, 400 A, 3.3 V, 1.2 kV, Module
(EN)
SEMIKRON
晶体管, IGBT阵列&模块, 双N沟道, 114 A, 1.85 V, 1.2 kV, Module
(EN)
SEMIKRON
晶体管, IGBT阵列&模块, 双N沟道, 616 A, 1.8 V, 1.2 kV, Module
(EN)
