产品分类：半导体 - 分立器件,规格：晶体管极性 双N沟道,
VISHAY
双路场效应管, MOSFET, 双N沟道, 25 A, 30 V, 0.0076 ohm, 10 V, 2.5 V
(EN)
FUJI ELECTRIC
晶体管, IGBT阵列&模块, 双N沟道, 2.4 kA, 2.47 V, 9.76 kW, 1.7 kV, Module
(EN)
NEXPERIA
双路场效应管, MOSFET, 双N沟道, 340 mA, 60 V, 1 ohm, 10 V, 1.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 115 mA, 60 V, 1.6 ohm, 5 V, 1.76 V
(EN)
DIODES INC.
双路场效应管, MOSFET, 双N沟道, 115 mA, 60 V, 13.5 ohm, 10 V, 2 V
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 5.1 A, 55 V, 0.043 ohm, 10 V, 1 V
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 40 A, 25 V, 0.0009 ohm, 10 V, 1.6 V
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 50 A, 25 V, 0.0024 ohm, 10 V, 1.6 V
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 1.5 A, 20 V, 0.108 ohm, 4.5 V, 950 mV
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 8 A, 30 V, 0.0125 ohm, 10 V, 2 V
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 6 A, 30 V, 0.0183 ohm, 10 V, 2.1 V
(EN)DIODES INC.
双路场效应管, MOSFET, 双N沟道, 200 mA, 50 V, 3.5 ohm, 10 V, 1.2 V
(EN)
NEXPERIA
双路场效应管, MOSFET, 双N沟道, 320 mA, 60 V, 0.9 ohm, 10 V, 1.2 V
(EN)
WOLFSPEED
单晶体管 双极, 双N沟道, 168 A, 1.2 kV, 0.016 ohm, 20 V, 2.6 V
(EN)
WOLFSPEED
单晶体管 双极, 双N沟道, 325 A, 1.7 kV, 0.008 ohm, 20 V, 2.3 V
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 8 A, 12 V, 0.0099 ohm, 4.5 V, 950 mV
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 5 A, 20 V, 0.023 ohm, 4.5 V, 900 mV
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 4.5 A, 25 V, 0.029 ohm, 4.5 V, 1 V
(EN)TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 4.5 A, 25 V, 0.029 ohm, 4.5 V, 1 V
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 14 A, 30 V, 0.0066 ohm, 10 V, 1.8 V
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 15 A, 60 V, 0.0125 ohm, 10 V, 3 V
(EN)TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 15 A, 60 V, 0.023 ohm, 10 V, 3 V
(EN)
DIODES INC.
双路场效应管, MOSFET, 双N沟道, 21 A, 30 V, 0.0095 ohm, 10 V, 2 V
(EN)DIODES INC.
双路场效应管, MOSFET, 双N沟道, 305 mA, 50 V, 2 ohm, 5 V, 1 V
(EN)
ROHM
双路场效应管, MOSFET, 双N沟道, 300 mA, 20 V, 0.7 ohm, 4 V, 1 V
(EN)
