产品分类：半导体 - 分立器件,品牌：VISHAY,规格：晶体管极性 N和P沟道,
VISHAY
双路场效应管, MOSFET, 双路, N和P沟道, 1.13 A, 20 V, 0.22 ohm, 4.5 V, 1 V
(EN)
VISHAY
双路场效应管, MOSFET, N和P沟道, 2.5 A, 30 V, 0.085 ohm, 10 V, 1 V
(EN)
VISHAY
双路场效应管, MOSFET, N和P沟道, 3.9 A, 20 V, 0.048 ohm, 4.5 V, 1.5 V
(EN)VISHAY
双路场效应管, MOSFET, N和P沟道, 3.9 A, 20 V, 0.048 ohm, 4.5 V, 1.5 V
(EN)VISHAY
双路场效应管, MOSFET, N和P沟道, 2 A, 20 V, 0.1 ohm, 4.5 V, 600 mV
(EN)VISHAY
双路场效应管, MOSFET, N和P沟道, 2.5 A, 20 V, 0.064 ohm, 4.5 V, 450 mV
(EN)VISHAY
双路场效应管, MOSFET, N和P沟道, 2.5 A, 20 V, 0.064 ohm, 4.5 V, 450 mV
(EN)
VISHAY
双路场效应管, MOSFET, N和P沟道, 2.5 A, 30 V, 0.062 ohm, 4.5 V, 1.5 V
(EN)
VISHAY
双路场效应管, MOSFET, N和P沟道, 6.6 A, 20 V, 0.016 ohm, 4.5 V, 1.5 V
(EN)VISHAY
双路场效应管, MOSFET, N和P沟道, 6.6 A, 20 V, 0.016 ohm, 4.5 V, 1.5 V
(EN)
VISHAY
双路场效应管, MOSFET, N和P沟道, 12 A, 30 V, 0.0135 ohm, 10 V, 800 mV
(EN)VISHAY
双路场效应管, MOSFET, N和P沟道, 7.2 A, 20 V, 11.5 mohm, 10 V, 600 mV
(EN)VISHAY
双路场效应管, MOSFET, N和P沟道, 7.2 A, 20 V, 11.5 mohm, 10 V, 600 mV
(EN)
VISHAY
双路场效应管, MOSFET, N和P沟道, 4.9 A, 30 V, 0.044 ohm, 10 V, 1 V
(EN)VISHAY
双路场效应管, MOSFET, N和P沟道, 6 A, 30 V, 38 mohm, 10 V, 1 V
(EN)VISHAY
双路场效应管, MOSFET, N和P沟道, 8 A, 40 V, 0.02 ohm, 10 V, 1 V
(EN)VISHAY
双路场效应管, MOSFET, N和P沟道, 10 A, 40 V, 0.0145 ohm, 10 V, 800 mV
(EN)VISHAY
双路场效应管, MOSFET, N和P沟道, 6.8 A, 40 V, 29.5 mohm, 10 V, 1.4 V
(EN)
VISHAY
双路场效应管, MOSFET, N和P沟道, 6.1 A, 20 V, 43 mohm, 4.5 V, 2 V
(EN)
VISHAY
双路场效应管, MOSFET, N和P沟道, 5.4 A, 30 V, 0.028 ohm, 10 V, 3 V
(EN)VISHAY
双路场效应管, MOSFET, N和P沟道, 11.8 A, 12 V, 17 mohm, 4.5 V, 1.5 V
(EN)VISHAY
双路场效应管, MOSFET, N和P沟道, 11.8 A, 12 V, 17 mohm, 4.5 V, 1.5 V
(EN)
