产品分类：半导体 - 分立器件,规格：晶体管封装类型 TO-252AA,
VISHAY
MOSFET, P CHANNEL, -100V, -5.6A, TO-252-3
(EN)
VISHAY
晶体管, MOSFET, N沟道, 4.3 A, 100 V, 0.54 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 42 A, 100 V, 0.015 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 10 A, 100 V, 0.142 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 42 A, 40 V, 0.0043 ohm, 10 V, 4 V
(EN)VISHAY
MOSFET, N CHANNEL, 250V, 3.8A, TO-252-3
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 11 A, 60 V, 0.107 ohm, 5 V, 3 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -5.6 A, -100 V, 0.6 ohm, -10 V, -4 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 35 A, 25 V, 0.0065 ohm, 10 V, 1.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 16 A, 50 V, 47 mohm, 5 V, 2 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 7.4 A, 250 V, 0.33 ohm, 10 V, 5 V
(EN)VISHAY
MOSFET, P CHANNEL, -100V, -38A, TO-252-3
(EN)VISHAY
MOSFET, N CHANNEL, 60V, 14A, TO-252-3
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 800V, 1mA
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 32 A, 100 V, 36 mohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 1.9 A, 600 V, 3.6 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 42 A, 55 V, 0.011 ohm, 10 V, 3 V
(EN)VISHAY
MOSFET, N CHANNEL, 500V, 2.4A, TO-252-3
(EN)INFINEON
晶体管, MOSFET, N沟道, 5 A, 200 V, 0.6 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 17 A, 60 V, 0.052 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -20 A, -55 V, 0.093 ohm, -10 V, -1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 60V, 12A TO-252AA
(EN)INFINEON
晶体管, MOSFET, N沟道, 17 A, 55 V, 0.065 ohm, 10 V, 2 V
(EN)INFINEON
单晶体管, IGBT, 16 A, 1.7 V, 77 W, 600 V, TO-252AA, 3 引脚
(EN)
