产品分类：半导体 - 分立器件,规格：晶体管封装类型 TO-220FP,
VISHAY
场效应管, MOSFET, N沟道
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 600V, 2.4A, TO-220FP
(EN)NTE ELECTRONICS
双极性晶体管, 达林顿, PNP, 100V V(BR)CEO,8A I(C),TO-220VAR
(EN)INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 42W, TO-220 FULLPAK
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 5.4 A, 400 V, 250 mohm, 10 V, 3.75 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 3.9 A, 800 V, 1.22 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 37.9 A, 600 V, 0.089 ohm, 10 V, 4 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 13.8 A, 600 V, 0.252 ohm, 10 V, 4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.11 ohm, 10 V, 3 V
(EN)INTERNATIONAL RECTIFIER
晶体管, 单路, IGBT, 600V
(EN)INFINEON
单晶体管, IGBT, 19 A, 2.2 V, 52 W, 600 V, TO-220FP, 3 引脚
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 17 A, 650 V, 0.15 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 37 A, 150 V, 0.0091 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 13.8 A, 650 V, 0.25 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 86 A, 60 V, 0.0027 ohm, 10 V, 4 V
(EN)VISHAY
场效应管, MOSFET, P沟道
(EN)VISHAY
晶体管, MOSFET, P沟道, 12 A, -60 V, 140 mohm, -10 V, -4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 41 A, 150 V, 45 mohm, 10 V, 5.5 V
(EN)INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 150V, 41A, TO-220FP
(EN)INFINEON
晶体管, MOSFET, N沟道, 19 A, 55 V, 0.042 ohm, 10 V, 1 V
(EN)ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 600V, 3A, TO-220FP
(EN)
NTE ELECTRONICS
达林顿晶体管, NPN, 100V, 8A, TO-220FP-3
(EN)VISHAY
晶体管, MOSFET, N沟道, 16 A, 500 V, 0.31 ohm, 10 V, 3 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 29 A, 600 V, 0.104 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 4.5 A, 500 V, 0.85 ohm, 10 V, 3 V
(EN)
