产品分类：半导体 - 分立器件,规格：晶体管封装类型 TO-220FP,
STMICROELECTRONICS
单晶体管, IGBT, 20 A, 1.8 V, 25 W, 600 V, TO-220FP, 3 引脚
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 8.5 A, 650 V, 0.39 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 12 A, 650 V, 0.35 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
单晶体管, IGBT, 11 A, 2.5 V, 28 W, 600 V, TO-220FP, 3 引脚
(EN)VISHAY
晶体管, MOSFET, N沟道, 4.6 A, 500 V, 850 mohm, 10 V, 4 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 2.1 A, 800 V, 3 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 35 A, 100 V, 0.0107 ohm, 10 V, 2 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.5 A, 1 kV, 5.4 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 17 A, 500 V, 0.162 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 17 A, 600 V, 0.17 ohm, 10 V, 4 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 500V, 19A, TO-220FP-3
(EN)
VISHAY
MOSFET, N CHANNEL, 600V, 12A, TO-220-3
(EN)
INFINEON
晶体管, MOSFET, N沟道, 14.1 A, 500 V, 0.34 ohm, 13 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.113 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 49 A, 55 V, 0.012 ohm, 10 V, 4 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 13.8 A, 600 V, 0.25 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 10.6 A, 600 V, 0.34 ohm, 10 V, 3 V
(EN)INFINEON
单晶体管, IGBT, N通道, 11.5 A, 3.01 V, 34 W, 600 V, TO-220FP, 3 引脚
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 10.6 A, 600 V, 0.342 ohm, 10 V, 4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 8 A, 650 V, 0.168 ohm, 10 V, 3.5 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 55V, 14A TO-220FP
(EN)INFINEON
单晶体管, IGBT, 20 A, 360 V, 34 W, 360 V, TO-220FP, 3 引脚
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 6.5 A, 600 V, 0.63 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 2.5 A, 525 V, 2.1 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 3 A, 900 V, 4.8 ohm, 10 V, 3.75 V
(EN)
