产品分类：半导体 - 分立器件,规格：功耗 Pd 60W,
ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 5.3 A, 2.5 V, 60 W, 1.2 kV, TO-252AA, 3 引脚
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 6.1 A, 650 V, 0.54 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 6.1 A, 650 V, 0.54 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 6.1 A, 650 V, 0.54 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 18 A, 100 V, 72.5 mohm, 10 V, 5 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
INFINEON
晶体管, IGBT, TO-220AB, 11A, 1200V
(EN)
INFINEON
单晶体管, IGBT, 11 A, 3.17 V, 60 W, 1.2 kV, TO-247AC, 3 引脚
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -24 A, -20 V, 0.041 ohm, -4.5 V, -700 mV
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 20 A, 60 V, 37.5 mohm, 10 V, 2.91 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 16 A, 50 V, 47 mohm, 5 V, 2 V
(EN)
RENESAS
晶体管, MOSFET, N沟道, 30 A, 80 V, 8.2 mohm, 10 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4 A, 650 V, 1.2 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4 A, 650 V, 1.2 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5 A, 650 V, 0.98 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5 A, 650 V, 0.79 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
单晶体管, IGBT, 10 A, 2.5 V, 60 W, 600 V, TO-263, 3 引脚
(EN)STMICROELECTRONICS
单晶体管, IGBT, 10 A, 2.5 V, 60 W, 600 V, TO-263, 3 引脚
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 25 A, 12 V, 0.0022 ohm, 4.5 V, 500 mV
(EN)
