产品分类：半导体 - 分立器件,规格：功耗 Pd 60W,
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 60 V, 40 MHz, 60 W, 4 A, 40 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双极性晶体管, NPN, HFE 40
(EN)
VISHAY
晶体管, MOSFET, P沟道, 11 A, -60 V, 280 mohm, -10 V, -4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -100 V, 60 W, -8 A, 750 hFE
(EN)STMICROELECTRONICS
单晶体管 双极, 达林顿, NPN, 80 V, 60 W, 8 A, 750 hFE
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, 60 V, 40 MHz, 60 W, -8 A, 60 hFE
INFINEON
单晶体管, IGBT, 16 A, 1.66 V, 60 W, 600 V, TO-220AB, 3 引脚
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 200 V, 10 MHz, 60 W, 7 A
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 10 A, 60 V, 60 mohm, 10 V, 3 V
(EN)
INTERNATIONAL RECTIFIER
晶体管, 单路, IGBT, 600V, 13A
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 6.1 A, 650 V, 0.54 ohm, 10 V, 3 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 5.5 A, 600 V, 750 mohm, 10 V, 4 V
(EN)INFINEON
单晶体管, IGBT, 16 A, 1.66 V, 60 W, 600 V, TO-220AB, 3 引脚
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 3.5 A, 55 V, 60 mohm, 5 V, 2.5 V
(EN)
NTE ELECTRONICS
小信号双极性晶体管
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, IGBT, 600V, 14A
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 60V, 20A, D-PAK, 整卷
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5 A, 650 V, 0.98 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5 A, 650 V, 0.79 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4 A, 650 V, 1.2 ohm, 10 V, 3 V
(EN)
VISHAY
场效应管, MOSFET, P沟道
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -24 A, -20 V, 0.041 ohm, -4.5 V, -700 mV
(EN)STMICROELECTRONICS
单晶体管 双极, 达林顿, PNP, 80 V, 60 W, 8 A, 750 hFE
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 50 A, 40 V, 8.5 mohm, 20 V, 1.9 V
(EN)
