产品分类：半导体 - 分立器件,规格：功耗 Pd 60W,
INFINEON
晶体管, MOSFET, N沟道, 42 A, 100 V, 0.0139 ohm, 10 V, 2.7 V
INFINEON
双路场效应管, MOSFET, 双N沟道, 20 A, 100 V, 0.02 ohm, 10 V, 1.6 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 48 A, 30 V, 7.6 mohm, 10 V, 1.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 24 A, -20 V, 0.041 ohm, -4.5 V, -700 mV
(EN)MULTICOMP
单晶体管 双极, 达林顿, NPN, 200 V, 60 W, 8 A, 375 hFE
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5 A, 650 V, 0.98 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5 A, 650 V, 0.79 ohm, 10 V, 3 V
(EN)
INFINEON
单晶体管, IGBT, 11 A, 3.17 V, 60 W, 1.2 kV, TO-263, 3 引脚
(EN)
INTERNATIONAL RECTIFIER
晶体管, 单路, IGBT, 600V, 13A
ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 5.3 A, 2.5 V, 60 W, 1.2 kV, TO-252AA, 3 引脚
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4 A, 650 V, 1.2 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 24 A, 60 V, 0.032 ohm, 10 V, 2.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 12 A, 100 V, 200 mohm, 5 V, 2 V
(EN)
RENESAS
晶体管, MOSFET, N沟道, 23 A, 100 V, 13 mohm, 10 V
(EN)
TOSHIBA
晶体管, MOSFET, 功率, N沟道, 3 A, 500 V, 2.3 ohm, 10 V, 2.4 V
(EN)MULTICOMP
单晶体管 双极, NPN, 200 V, 10 MHz, 60 W, 7 A, 30 hFE
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5 A, 600 V, 0.86 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 6 A, 45 V, 0.06 ohm, 5 V, 500 mV
(EN)
STMICROELECTRONICS
双路场效应管, MOSFET, 双N沟道, 40 A, 30 V, 0.016 ohm, 10 V, 1.5 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5 A, 600 V, 0.86 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4 A, 650 V, 1.2 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 60V, 20A, D-PAK
(EN)VISHAY
晶体管, MOSFET, N沟道, 9.2 A, 100 V, 270 mohm, 10 V, 4 V
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 20 A, 100 V, 0.02 ohm, 10 V, 1.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双极性晶体管, NPN, 200V, TO-220
(EN)
