产品分类：半导体 - 分立器件,规格：功耗 Pd 74W,
VISHAY
功率场效应管, MOSFET, N沟道, 3.6 A, 600 V, 2.2 ohm, 10 V, 4.5 V
(EN)
VISHAY
晶体管, MOSFET, HEXFET, P沟道, -18 A, -50 V, 0.093 ohm, -10 V, -4 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 7 A, 55 V, 35 mohm, 5 V, 2.5 V
(EN)
VISHAY
场效应管, N通道, MOSFET, 250V, 8.1A TO-220
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 6.2 A, 650 V, 0.68 ohm, 10 V, 3 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 74W, TO-262
(EN)
VISHAY
晶体管, MOSFET, N沟道, 9 A, 200 V, 0.4 ohm, 5 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -6.5 A, -200 V, 0.8 ohm, -10 V, -2 V
(EN)ROHM
功率场效应管, MOSFET, N沟道, 24 A, 600 V, 0.15 ohm, 10 V, 5 V
(EN)ROHM
功率场效应管, MOSFET, N沟道, 24 A, 600 V, 0.15 ohm, 10 V, 4 V
(EN)
ROHM
功率场效应管, MOSFET, N沟道, 24 A, 600 V, 0.15 ohm, 10 V, 5 V
(EN)
VISHAY
MOSFET, P CHANNEL, -200V, 0.8OHM, -6.5A, TO-263-3
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 28.1 A, 100 V, 30.8 mohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 211 A, 30 V, 0.0008 ohm, 10 V, 1.6 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0012 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 33 A, 150 V, 0.031 ohm, 10 V, 3 V
INFINEON
功率场效应管, MOSFET, N沟道, 9.2 A, 600 V, 0.41 ohm, 10 V, 3 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 250V, 8.1A, SMD-220
(EN)
VISHAY
场效应管, MOSFET, N沟道, 600V, 3.6ATO-262
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 30V V(BR)DSS
(EN)
NTE ELECTRONICS
场效应管, MOSFET, N沟道, 500V, 4.5A TO-220
(EN)
NXP
场效应管, MOSFET, N沟道, 60V, 44A, 4-SOT-669
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 34 A, 80 V, 20 mohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 28.1 A, 100 V, 30.8 mohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 70 A, 40 V, 6.6 mohm, 10 V, 3 V
(EN)
