产品分类：半导体 - 分立器件,品牌：DIODES INC.,规格：功耗 Pd 1.3W,
DIODES INC.
晶体管, MOSFET, N沟道, 6.5 A, 20 V, 21 mohm, 4.5 V, 500 mV
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 44 A, 100 V, 0.011 ohm, 10 V, 2 V
(EN)
DIODES INC.
双路场效应管, MOSFET, N和P沟道, 9 A, 30 V, 0.012 ohm, 10 V, 2 V
(EN)
DIODES INC.
双路场效应管, MOSFET, N和P沟道, 5.5 A, 30 V, 0.028 ohm, 10 V, 1 V
(EN)
DIODES INC.
双路场效应管, MOSFET, 增强模式, N和P沟道, 3.1 A, 30 V, 0.12 ohm, 10 V, -1 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 35.8 A, 30 V, 0.0011 ohm, 10 V, 3 V
(EN)DIODES INC.
双路场效应管, MOSFET, N和P沟道, 5.5 A, 30 V, 0.028 ohm, 10 V, 1 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 6.5 A, 20 V, 21 mohm, 4.5 V, 500 mV
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 2.8 A, 60 V, 0.075 ohm, 5 V, 1 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 2.8 A, 60 V, 0.075 ohm, 5 V, 1 V
(EN)
