产品分类：半导体 - 分立器件,规格：功耗 Pd 34W,
INFINEON
晶体管, MOSFET, N沟道, 7 A, 200 V, 0.194 ohm, 10 V, 3 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 17 A, 75 V, 0.041 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 7 A, 200 V, 0.194 ohm, 10 V, 3 V
VISHAY
功率场效应管, MOSFET, N沟道, 15 A, 600 V, 0.23 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 19 A, 500 V, 0.16 ohm, 10 V, 4 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 15 A, 600 V, 0.23 ohm, 10 V, 2 V
(EN)VISHAY
双路场效应管, MOSFET, 双N沟道, 15 A, 60 V, 0.047 ohm, 10 V, 2 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 23.8 A, 600 V, 0.144 ohm, 10 V, 4 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 20.2 A, 650 V, 0.17 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 21 A, 600 V, 0.15 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 23 A, 550 V, 0.13 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 20.2 A, 600 V, 0.171 ohm, 10 V, 4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 17.5 A, 700 V, 0.171 ohm, 10 V, 4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 20.2 A, 650 V, 0.17 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 26.7 A, 600 V, 0.17 ohm, 10 V, 3 V
(EN)INFINEON
单晶体管, IGBT, 11.8 A, 2.16 V, 34 W, 600 V, TO-220FP, 3 引脚
(EN)
INFINEON
场效应管, MOSFET, N沟道, 25V, 25A, PQFN-8
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 8 A, 60 V, 0.03 ohm, 10 V, 2 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 600V, 15A, TO-220F
(EN)
VISHAY
场效应管, MOSFET, N沟道, 500V, 19A, TO-220FP-3
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.113 ohm, 10 V, 4 V
(EN)INFINEON
单晶体管, IGBT, N通道, 11.5 A, 3.01 V, 34 W, 600 V, TO-220FP, 3 引脚
(EN)
INFINEON
单晶体管, IGBT, 20 A, 360 V, 34 W, 360 V, TO-220FP, 3 引脚
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 37.9 A, 600 V, 0.089 ohm, 10 V, 4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.11 ohm, 10 V, 3 V
(EN)
