产品分类：半导体 - 分立器件,规格：功耗 Pd 330W,
INFINEON
晶体管, MOSFET, N沟道, 140 A, 75 V, 7 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 140 A, 55 V, 0.008 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 62 A, 200 V, 0.022 ohm, 10 V, 5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 75 A, 55 V, 0.0046 ohm, 10 V, 2 V
(EN)
INTERNATIONAL RECTIFIER
晶体管, IGBT, 600V, 96A
(EN)
INFINEON
场效应管, MOSFET, N沟道, 40V, 160A
(EN)
VISHAY
晶体管, IGBT阵列&模块, NPN, 66 A, 4.15 V, 330 W, 1.2 kV, EconoPACK
(EN)INFINEON
晶体管, MOSFET, N沟道, 83 A, 150 V, 15 mohm, 10 V, 5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 75 A, 55 V, 0.0039 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 169 A, 55 V, 5.3 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 175 A, 55 V, 4.7 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 33 A, 150 V, 15 mohm, 10 V, 5 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 150V, 83A
(EN)
INTERNATIONAL RECTIFIER
晶体管, IGBT, 1.65V, 96A, TO-247AD-3
(EN)
INTERNATIONAL RECTIFIER
IGBT, 1.65V, 96A, TO-247AC-3
(EN)
INFINEON
晶体管, MOSFET, N沟道, 200 A, 30 V, 0.0026 ohm, 10 V, 2.5 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 60 A, 75 V, 0.0035 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 60 A, 75 V, 3.5 mohm, 10 V, 4 V
(EN)
