产品分类：半导体 - 分立器件,规格：功耗 Pd 250W,
VISHAY
晶体管, MOSFET, N沟道, 78.5 A, 200 V, 0.0127 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, 音频, NPN, 140 V, 2 MHz, 250 W, 20 A, 150 hFE
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 22 A, 600 V, 160 mohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0011 ohm, 10 V, 1.8 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 600V, 29A, TO-247AC-3
(EN)
INFINEON
晶体管, MOSFET, N沟道, 180 A, 60 V, 1.3 mohm, 10 V, 3 V
(EN)
FUJI ELECTRIC
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.106 ohm, 10 V, 3 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 274 A, 40 V, 0.0014 ohm, 10 V, 1.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 180 A, 40 V, 0.0009 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, IGBT, 超快, 600V, 160A, TO-264
(EN)INFINEON
晶体管, MOSFET, N沟道, 127 A, 100 V, 0.0056 ohm, 20 V, 4 V
(EN)ON SEMICONDUCTOR
单晶体管 双极, 音频, NPN, 250 V, 4 MHz, 250 W, 16 A, 75 hFE
(EN)
SOLID STATE
达林顿硅晶体管, NPN, TO-3
(EN)MULTICOMP
单晶体管 双极, 通用, NPN, 250 V, 4 MHz, 250 W, 16 A, 15 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 120 A, 40 V, 1.2 mohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR
单晶体管 双极, 音频, PNP, -200 V, 4 MHz, 250 W, -16 A, 60 hFE
(EN)ON SEMICONDUCTOR
单晶体管 双极, 音频, PNP, -140 V, 2 MHz, 250 W, -20 A, 150 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 46 A, 1.17 V, 250 W, 360 V, TO-263AB, 3 引脚
(EN)
STMICROELECTRONICS
单晶体管, IGBT, 63 A, 1.3 kV, 250 W, 1.3 kV, TO-247, 3 引脚
(EN)
INFINEON
晶体管, MOSFET, N沟道, 75 A, 100 V, 0.0048 ohm, 10 V, 4 V
(EN)SOLID STATE
单晶体管 双极, 达林顿, NPN, 400 V, 250 W, 40 A, 60 hFE
(EN)ON SEMICONDUCTOR
单晶体管 双极, 音频, NPN, 200 V, 4 MHz, 250 W, 16 A, 60 hFE
(EN)INFINEON
单晶体管, IGBT, 48 A, 1.6 V, 250 W, 600 V, TO-263, 2 引脚
(EN)NTE ELECTRONICS
单晶体管 双极, NPN, 250 V, 4 MHz, 250 W, 16 A, 15 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 160 A, 2.6 V, 250 W, 600 V, TO-264, 3 引脚
(EN)
