产品分类：半导体 - 分立器件,品牌：STMICROELECTRONICS,规格：功耗 Pd 140W,
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.9 A, 900 V, 1.56 ohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.9 A, 900 V, 1.56 ohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 17 A, 600 V, 0.17 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.5 A, 1.5 kV, 6 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5.8 A, 900 V, 2 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.135 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.5 A, 1.5 kV, 6 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 22 A, 650 V, 0.125 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 1.3 A, 1.5 kV, 6 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 17 A, 600 V, 0.17 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.135 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 17 A, 600 V, 0.17 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.9 A, 900 V, 1.56 ohm, 10 V, 3.75 V
(EN)
