产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
NEXPERIA
双极晶体管阵列, AEC-Q101, 双PNP, -45 V, 350 mW, -100 mA, 200 hFE, DFN1010B
(EN)
ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, NPN, 100 V, 40 MHz, 12.5 W, 4 A, 15 hFE
(EN)
DIODES INC.
双路场效应管, MOSFET, AEC-Q101, 双N沟道, 1.33 A, 20 V, 0.3 ohm, 5 V, 900 mV
(EN)
MICROCHIP
晶体管, MOSFET, N沟道, 230 mA, 350 V, 10 ohm, 0 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 8 A, 60 V, 0.03 ohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 7.8 A, 200 V, 0.29 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR
单晶体管 双极, AEC-Q100, PNP, -350 V, 10 MHz, 15 W, -1 A, 10 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 192 A, 100 V, 0.0035 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
晶体管, JFET, -15 V, 10 mA, 20 mA, -1.5 V, SOT-23, JFET
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双极晶体管阵列, 双PNP, -45 V, 300 mW, -200 mA, 125 hFE, SC-70
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 3.5 A, 20 V, 0.0417 ohm, 4.5 V, 1.5 V
(EN)
NEXPERIA
双路场效应管, MOSFET, N和P沟道, 5.3 A, 20 V, 0.026 ohm, 4.5 V, 650 mV
(EN)
DIODES INC.
双路场效应管, MOSFET, 双N沟道, 115 mA, 60 V, 13.5 ohm, 10 V, 2 V
(EN)NEXPERIA
双极晶体管阵列, AEC-Q101, NPN, PNP, 45 V, 230 mW, 100 mA, 200 hFE, DFN1010B
(EN)INFINEON
晶体管, MOSFET, N沟道, 17 A, 55 V, 65 mohm, 10 V, 2 V
(EN)
VISHAY
双路场效应管, MOSFET, N和P沟道, 4 A, 20 V, 0.03 ohm, 4.5 V, 400 mV
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 31 A, 100 V, 0.031 ohm, 5 V, 1.7 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 87 A, 40 V, 0.0031 ohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 78 A, 40 V, 0.0037 ohm, 10 V, 2 V
(EN)
NEXPERIA
晶体管, MOSFET, NextPowerS3, N沟道, 300 A, 25 V, 0.00072 ohm, 10 V, 1.73 V
(EN)NEXPERIA
晶体管 双极预偏置/数字, NPN和PNP执行, 50 V, 100 mA, 4.7 kohm, 47 kohm
(EN)
STMICROELECTRONICS
Triac, 600 V, 8 A, TO-263, 35 mA, 1.3 V, 1 W
(EN)
VISHAY
晶体管, MOSFET, N沟道, 190 mA, 60 V, 2 ohm, 10 V, 1 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 37 A, 40 V, 0.0086 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -7.8 A, -20 V, 27 mohm, -4.5 V, -700 mV
(EN)
