产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 185 A, 40 V, 0.0014 ohm, 10 V, 3.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, KSE, NPN, 300 V, 20 W, 500 mA, 30 hFE
(EN)
VISHAY
晶体管, MOSFET, P沟道, -2.2 A, -200 V, 0.145 ohm, -10 V, -4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 310 mA, 60 V, 1.6 ohm, 10 V, 2.1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 6.8 A, -30 V, 0.03 ohm, 25 V, -2.1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -3.7 A, -20 V, 60 mohm, -4.5 V, -700 mV
(EN)
ROHM
双极晶体管阵列, AEC-Q101, 双NPN, 50 V, 150 mW, 150 mA, 120 hFE, SOT-563
(EN)
INFINEON
晶体管, MOSFET, N沟道, 22 A, 30 V, 45 mohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -4.9 A, -30 V, 0.036 ohm, -10 V, -2.2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 6.5 A, 80 V, 0.032 ohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管 双极-射频, NPN, 65 V, 100 MHz, 200 mW, 100 mA, 180 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0014 ohm, 10 V, 2.8 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 11.8 A, 80 V, 0.0824 ohm, 10 V, 1.7 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, 1.1 A, -30 V, 350 mohm, 10 V, -1 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -5.97 A, -20 V, 50 mohm, -4.5 V, -600 mV
(EN)
DIODES INC.
单晶体管 双极, NPN, 40 V, 250 MHz, 200 mW, 600 mA, 100 hFE
(EN)
ON SEMICONDUCTOR
单晶体管 双极, PNP, 25 V, 65 MHz, 1.4 W, 5 A, 3 hFE
(EN)DIODES INC.
晶体管, MOSFET, P沟道, -1.5 A, -20 V, 75 mohm, -4.5 V, -600 mV
(EN)INFINEON
晶体管, MOSFET, N沟道, 50 A, 40 V, 0.0072 ohm, 10 V, 3 V
(EN)
TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, SOIC
(EN)
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, BRT, 双路 NPN, 50 V, 100 mA, 10 kohm, 47 kohm, 0.21 电阻比率
(EN)
ON SEMICONDUCTOR
单晶体管 双极, PNP, -32 V, 225 mW, -100 mA, 215 hFE
(EN)INFINEON
晶体管, MOSFET, N沟道, 29 A, 60 V, 0.027 ohm, 10 V, 1.6 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 300 A, 30 V, 0.00037 ohm, 10 V, 2.2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 35 A, 120 V, 0.0096 ohm, 10 V, 2.6 V
(EN)
