产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 900 mA, -30 V, 0.25 ohm, -10 V, -1.7 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 46 A, 60 V, 0.013 ohm, 10 V, 2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.00105 ohm, 10 V, 1.45 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0047 ohm, 10 V, 3 V
(EN)
NEXPERIA
双极- 射频功率晶体管, 220 MHz, 500 hFE, 1 A
(EN)VISHAY
晶体管, MOSFET, N沟道, 115 mA, 60 V, 7.5 ohm, 10 V, 2.1 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -31 A, -55 V, 65 mohm, -10 V, -4 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 80 V, 0.0058 ohm, 10 V, 1.7 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 7.3 A, 600 V, 0.54 ohm, 10 V, 3 V
(EN)
NEXPERIA
单晶体管 双极, 通用, NPN, 65 V, 100 MHz, 250 mW, 100 mA, 110 hFE
(EN)NEXPERIA
双极晶体管阵列, AEC-Q101, NPN, PNP, 100 V, 1.25 W, 3 A, 10 hFE, SOT-1205
(EN)
NEXPERIA
双路场效应管, MOSFET, 双P沟道, -550 mA, -20 V, 0.67 ohm, -4.5 V, -800 mV
(EN)
NEXPERIA
双路场效应管, MOSFET, Trench, 双N沟道, 320 mA, 60 V, 1 ohm, 10 V, 1.1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 44 A, 650 V, 0.062 ohm, 10 V, 4.5 V
(EN)
DIODES INC.
单晶体管 双极, 达林顿, NPN, 140 V, 250 MHz, 2 W, 2 A, 20000 hFE
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.00079 ohm, 10 V, 1.75 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 41 A, 100 V, 0.0165 ohm, 10 V, 2.5 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 23 A, 100 V, 0.044 ohm, 4.5 V, 2 V
(EN)NEXPERIA
单晶体管 双极, PNP, -150 V, 115 MHz, 700 mW, -1 A, 220 hFE
(EN)NEXPERIA
单晶体管 双极, PNP, -60 V, 110 MHz, 25 W, -3 A, 35 hFE
(EN)VISHAY
晶体管, MOSFET, N沟道, 5.3 A, 500 V, 1.2 ohm, 10 V, 3 V
(EN)
NXP
晶体管 双极-射频, NPN, 15 V, 9 GHz, 500 mW, 120 mA, 120 hFE
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 8 A, 30 V, 0.013 ohm, 10 V, 2 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 50 A, 30 V, 0.0085 ohm, 10 V, 1.64 V
(EN)DIODES INC.
单晶体管 双极, PNP, 100 V, 140 MHz, 2 W, -2 A, 200 hFE
(EN)
