产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 50 A, 75 V, 13 mohm, 10 V, 4 V
(EN)
INFINEON
单晶体管, IGBT, 20 A, 1.4 V, 125 W, 430 V, TO-263, 3 引脚
(EN)
NEXPERIA
双路场效应管, MOSFET, 双P沟道, -220 mA, -30 V, 2.8 ohm, -4.5 V, -900 mV
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -5.7 A, -20 V, 0.027 ohm, -4.5 V, -700 mV
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 250 A, 60 V, 0.0011 ohm, 10 V, 2 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 370 mA, 60 V, 1.4 ohm, 10 V, 2.5 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 28 A, 30 V, 0.01 ohm, 10 V, 1.2 V
(EN)
DIODES INC.
单晶体管 双极, PNP, 400 V, 50 MHz, 500 mW, -150 mA, 100 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 220 mA, 25 V, 3.1 ohm, 4.5 V, 850 mV
(EN)
MICROCHIP
晶体管, MOSFET, N沟道, 42 A, 25 V, 0.0173 ohm, 3.3 V, 1.35 V
(EN)DIODES INC.
单晶体管 双极, 高增益, PNP, 20 V, 290 MHz, 350 mW, 4 A, 450 hFE
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 136 A, 30 V, 0.0015 ohm, 10 V, 2.2 V
(EN)
NEXPERIA
单晶体管 双极, NPN, 40 V, 153 MHz, 1.35 W, 6 A, 60 hFE
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0053 ohm, 10 V, 2.7 V
(EN)MICROCHIP
晶体管, MOSFET, P沟道, 2 A, -6 V, 0.07 ohm, -4.5 V, -1.2 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0077 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 4 A, 150 V, 0.101 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 21 A, 200 V, 0.11 ohm, 10 V, 2 V
(EN)
NEXPERIA
双极晶体管阵列, PNP, -65 V, 300 mW, -100 mA, 290 hFE, SOT-363
(EN)STMICROELECTRONICS
晶闸管, 600 V, 15 mA, 8 A, 12 A, TO-263, 3 引脚
(EN)
INFINEON
晶体管, MOSFET, N沟道, 9.9 A, 30 V, 12 mohm, 4.5 V, 1.1 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, NPN, 60 V, 40 W, 4 A, 100 hFE
(EN)
NEXPERIA
单晶体管 双极, PNP, -30 V, 440 MHz, 250 mW, -25 mA, 25 hFE
(EN)
PANASONIC ELECTRONIC COMPONENTS
晶体管, MOSFET, N沟道, 2 A, 20 V, 0.085 ohm, 4 V, 850 mV
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 5 A, 25 V, 0.019 ohm, 8 V, 1.2 V
(EN)
