产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
NEXPERIA
晶体管, MOSFET, TrenchMOS, N沟道, 100 A, 60 V, 0.0047 ohm, 10 V, 1.7 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 140 mA, 450 V, 50 ohm, 10 V, 3 V
(EN)
DIODES INC.
单晶体管 双极, NPN, 400 V, 50 MHz, 500 mW, 225 mA, 100 hFE
(EN)NEXPERIA
晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 4.7 kohm, 47 kohm
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 71 A, 60 V, 0.0051 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.7 A, 20 V, 0.017 ohm, 2.5 V, 550 mV
(EN)
ROHM
晶体管 双极预偏置/数字, AEC-Q101, 单路NPN, 50 V, 100 mA, 22 kohm, 22 kohm, 1 电阻比率
(EN)
VISHAY
晶体管, MOSFET, N沟道, 5.3 A, 500 V, 1.2 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 31 A, 650 V, 0.09 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 33 A, 80 V, 0.02 ohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0101 ohm, 10 V, 1.8 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 207 A, 30 V, 0.00095 ohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 334 A, 25 V, 0.00055 ohm, 10 V, 2.1 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 200 A, 40 V, 0.0009 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, AEC-Q101, N沟道, 70 A, 60 V, 0.0054 ohm, 10 V, 2 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 2.5 A, 200 V, 650 mohm, 5 V, 2.5 V
(EN)
ON SEMICONDUCTOR
MOSFET Transistor, N Channel, 18 A, 30 V, 0.0025 ohm, 10 V, 1.6 V
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 34 A, 40 V, 0.0084 ohm, 10 V, 2.4 V
(EN)NEXPERIA
晶体管, MOSFET, TrenchMOS, N沟道, 49 A, 100 V, 0.0168 ohm, 10 V, 1.7 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -1.4 A, -20 V, 0.125 ohm, -4.5 V, 450 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 180 A, 30 V, 0.0013 ohm, 10 V, 1.8 V
(EN)
ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, PNP, -60 V, 2 MHz, 1.75 W, -10 A, 5 hFE
(EN)
NEXPERIA
晶体管, MOSFET, NextPowerS3, N沟道, 100 A, 25 V, 0.00089 ohm, 10 V, 1.75 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, 11.5 A, -12 V, 14 mohm, -4.5 V, -900 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 115 mA, 78 V, 2.53 ohm, 10 V, 1.76 V
(EN)
