NEXPERIA
晶体管, MOSFET, N沟道, 29 A, 100 V, 0.028 ohm, 10 V, 1.7 V
NEXPERIA
晶体管, MOSFET, N沟道, 26 A, 80 V, 0.025 ohm, 10 V, 1.7 V
NEXPERIA
晶体管, MOSFET, N沟道, 26 A, 100 V, 0.034 ohm, 10 V, 1.7 V
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双P沟道, -3 A, -20 V, 80 mohm, -4.5 V, -700 mV
DIODES INC.
单晶体管 双极, 达林顿, NPN, 40 V, 330 mW, 300 mA, 20000 hFE
INFINEON
功率场效应管, MOSFET, N沟道, 5.7 A, 800 V, 0.8 ohm, 10 V, 3 V
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 20.1 A, 30 V, 0.0022 ohm, 10 V, 2.1 V
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 330 A, 40 V, 0.0006 ohm, 10 V, 2 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 49 A, 150 V, 0.015 ohm, 10 V, 2.5 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 6.5 A, 20 V, 0.025 ohm, 4.5 V, 1 V
ON SEMICONDUCTOR
单晶体管 双极, NPN, 100 V, 110 MHz, 710 mW, 2 A, 40 hFE
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 18 A, 30 V, 0.0027 ohm, 10 V, 2.1 V
NEXPERIA
晶体管, MOSFET, N沟道, 12.8 A, 60 V, 0.059 ohm, 10 V, 1.7 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -2.6 A, -12 V, 40 mohm, -4.5 V, -600 mV
VISHAY
晶体管, MOSFET, P沟道, -50 A, -40 V, 6.7 mohm, -10 V, -1 V
NEXPERIA
晶体管, MOSFET, N沟道, 32 A, 60 V, 0.017 ohm, 10 V, 1.7 V
VISHAY
晶体管, MOSFET, P沟道, -10.5 A, -40 V, 0.013 ohm, -10 V, -1 V
ON SEMICONDUCTOR
单晶体管 双极, 达林顿, PNP, 100 V, 25 MHz, 1.75 W, 2 A, 12 hFE
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 30 A, 30 V, 0.0016 ohm, 10 V, 1.7 V
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 130 A, 30 V, 0.0026 ohm, 11.5 V, 2.5 V
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 270 A, 40 V, 0.00085 ohm, 10 V, 2 V
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 67 A, 30 V, 0.0034 ohm, 10 V, 2.2 V
VISHAY
晶体管, MOSFET, P沟道, -26.6 A, -20 V, 0.0051 ohm, -4.5 V, -1.5 V
INFINEON
晶体管, MOSFET, N沟道, 42 A, 55 V, 0.0111 ohm, 10 V, 4 V
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 370 A, 40 V, 0.00052 ohm, 10 V, 2 V