产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
ROHM
晶体管 双极预偏置/数字, AEC-Q101, 双路 NPN, 50 V, 100 mA, 10 kohm, 10 kohm
(EN)
VISHAY
晶体管, MOSFET, P沟道, -1.9 A, -200 V, 3 ohm, -10 V, -4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 3.5 A, 100 V, 0.047 ohm, 10 V, 3.1 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -12.6 A, -30 V, 0.0067 ohm, -10 V, -1.5 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 4.2 A, 20 V, 0.025 ohm, 4.5 V, 1 V
(EN)
ROHM
晶体管 双极预偏置/数字, AEC-Q101, 单路PNP, -50 V, -100 mA, 10 kohm, 47 kohm, 0.21 电阻比率
(EN)INFINEON
场效应管, MOSFET, P沟道, -30V, -1.5A, SOT-23-3
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 45 V, 330 MHz, 350 mW, 500 mA, 110 hFE
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 4 A, 800 V, 1.2 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -12 A, -30 V, 0.0085 ohm, -20 V, -1.8 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 915 mA, 20 V, 0.127 ohm, 4.5 V, 760 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 4.5 A, 60 V, 0.049 ohm, 10 V, 1.8 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -2.9 A, -60 V, 0.18 ohm, -10 V, -3 V
(EN)
INFINEON
晶体管 双极-射频, NPN, 12 V, 8 GHz, 580 mW, 80 mA, 70 hFE
(EN)
VISHAY
晶体管, MOSFET, P沟道, -2.1 A, -20 V, 0.116 ohm, -4.5 V, 600 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -2.1 A, -80 V, 0.147 ohm, -10 V, -1.6 V
(EN)
NEXPERIA
单晶体管 双极, NPN, 40 V, 550 mW, 5 A, 300 hFE
(EN)
VISHAY
晶体管, MOSFET, N沟道, 30 A, 20 V, 0.0046 ohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 16 A, 30 V, 0.0124 ohm, 10 V, 1.9 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -19 A, -55 V, 0.1 ohm, -10 V, -4 V
(EN)
NEXPERIA
单晶体管 双极, 通用, PNP, 45 V, 100 MHz, 250 mW, 100 mA, 420 hFE
(EN)
NEXPERIA
单晶体管 双极, PNP, -45 V, 250 mW, -100 mA, 125 hFE
(EN)DIODES INC.
双路场效应管, MOSFET, 双N沟道, 5 A, 60 V, 0.03 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 7.9 A, 30 V, 0.017 ohm, 10 V, 1.7 V
(EN)NEXPERIA
单晶体管 双极, NPN, 60 V, 180 MHz, 500 mW, 1 A, 63 hFE
(EN)
