产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道
(EN)
TEXAS INSTRUMENTS
双极晶体管阵列, NPN, 15 V, 750 mW, 50 mA, 100 hFE, SOIC
(EN)
VISHAY
双路场效应管, MOSFET, N和P沟道, 6.8 A, 40 V, 29.5 mohm, 10 V, 1.4 V
(EN)
DIODES INC.
MOSFET Transistor, P Channel, -4.2 A, -20 V, 0.04 ohm, -4.5 V, -900 mV
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 10.6 A, 600 V, 0.34 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0072 ohm, 10 V, 2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 56 A, 30 V, 0.0075 ohm, 10 V, 1.8 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -23 A, -100 V, 0.047 ohm, -10 V, -2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -3 A, -20 V, 0.09 ohm, -4.5 V, -700 mV
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -1 A, -20 V, 0.148 ohm, -10 V, -1.9 V
(EN)
NEXPERIA
单晶体管 双极, 通用, PNP, 45 V, 80 MHz, 200 mW, 500 mA, 250 hFE
(EN)VISHAY
晶体管, MOSFET, N沟道, 3 A, 500 V, 2.6 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 27 A, 55 V, 0.045 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管 双极-射频, NPN, 2.3 V, 65 GHz, 185 mW, 80 mA, 110 hFE
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 95 A, 30 V, 0.0034 ohm, 10 V, 1.74 V
INFINEON
双路场效应管, MOSFET, N和P沟道, 7.3 A, 30 V, 0.023 ohm, 10 V, 1 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -10 A, -20 V, 0.008 ohm, -10 V, 770 mV
(EN)
STMICROELECTRONICS
Thyristor, 600 V, 15 mA, 5 A, 8 A, TO-220AB, 3 Pins
(EN)
NEXPERIA
双极晶体管阵列, PNP, -45 V, 390 mW, -100 mA, 290 hFE, SOT-143B
(EN)
NEXPERIA
单晶体管 双极, 通用, PNP, -80 V, 50 MHz, 250 mW, -500 mA, 100 hFE
(EN)INFINEON
晶体管, MOSFET, P沟道, -31 A, -55 V, 0.065 ohm, -10 V, -4 V
(EN)
MULTICOMP
晶体管, 单结(UJT), 1.5 A, 1 μA, 5 mA, TO-92, 3引脚, 125 °C
(EN)INFINEON
双路场效应管, MOSFET, N和P沟道, 4.3 A, 20 V, 50 mohm, 4.5 V, 700 mV
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 25 V, 2.3 mohm, 4.5 V, 700 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 2.7 A, 55 V, 160 mohm, 10 V, 4 V
(EN)
