产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
VISHAY
晶体管, MOSFET, P沟道, -40 A, -20 V, 0.004 ohm, -10 V, -2.2 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 29 A, 600 V, 0.104 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, 2.5 A, -12 V, 90 mohm, -4.5 V, 700 mV
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 1.7 A, 20 V, 180 mohm, 4.5 V, 700 mV
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 9 A, 60 V, 153 mohm, 5 V, 1.7 V
(EN)
STMICROELECTRONICS
双路场效应管, MOSFET, 双P沟道, -4 A, -30 V, 0.07 ohm, 10 V, 1 V
(EN)
TOSHIBA
晶体管, MOSFET, 功率, N沟道, 28 A, 60 V, 0.0066 ohm, 10 V, 1.3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 45 A, 100 V, 16.7 mohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
Triac, 600 V, 8 A, TO-220AB, 50 mA, 1.3 V, 1 W
(EN)
VISHAY
晶体管, MOSFET, N沟道, 16 A, 60 V, 0.01 ohm, 10 V, 3 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 500 mA, 20 V, 0.99 ohm, 8 V, 1.1 V
(EN)VISHAY
双路场效应管, MOSFET, 双P沟道, -2.4 A, -60 V, 100 mohm, -10 V, -3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 42 A, 150 V, 0.0372 ohm, 10 V, 4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 7.3 A, 650 V, 0.54 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 9.4 A, 20 V, 14 mohm, 4.5 V, 1 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 37 A, 60 V, 0.0101 ohm, 10 V, 1.5 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 7.2 A, 40 V, 50 mohm, 10 V, 1 V
(EN)ROHM
晶体管 双极预偏置/数字, 单路PNP, -50 V, -500 mA, 10 kohm, 10 kohm, 1 电阻比率
(EN)ON SEMICONDUCTOR
单晶体管 双极, PNP, -25 V, 65 MHz, 12.5 W, -5 A, 10 hFE
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 18 A, 60 V, 0.0037 ohm, 10 V, 3.1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 56 A, 30 V, 0.012 ohm, 10 V, 1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 12 A, 60 V, 0.0088 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 170 mA, 400 V, 13.6 ohm, 10 V, 1.9 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 51 A, 55 V, 0.011 ohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 70 A, 30 V, 0.0036 ohm, 10 V, 1.5 V
(EN)
