产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
VISHAY
晶体管, MOSFET, N沟道, 6.7 A, 80 V, 0.0135 ohm, 10 V, 2 V
(EN)
STMICROELECTRONICS
双路场效应管, MOSFET, 双N沟道, 40 A, 30 V, 0.016 ohm, 10 V, 1.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 9.3 A, 80 V, 15 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 4.7 kohm, 47 kohm, 0.1 电阻比率
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, JFET, 40 V, -2 mA, -9 mA, 7.5 V, SOT-23, 通用
(EN)
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, BRT, 单路PNP, 50 V, 100 mA, 4.7 kohm, 4.7 kohm, 1 电阻比率
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 39 A, 30 V, 0.0135 ohm, 10 V, 1.66 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 8 A, 60 V, 0.0137 ohm, 10 V, 4 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 100 A, 40 V, 0.0034 ohm, 10 V, 2 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 6.9 A, 20 V, 0.013 ohm, 4.5 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 81 A, 25 V, 0.0042 ohm, 10 V, 1.8 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 16.7 A, 60 V, 0.044 ohm, 10 V, 1.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 160 A, 30 V, 0.0024 ohm, 10 V, 1.9 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 1.7 A, 400 V, 3.6 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 4.6 A, 80 V, 0.077 ohm, 10 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 34 A, 75 V, 28 mohm, 5 V, 1.5 V
(EN)
ON SEMICONDUCTOR
双极晶体管阵列, 双PNP, -30 V, 661 mW, -100 mA, 420 hFE, SOT-563
(EN)VISHAY
双路场效应管, MOSFET, N和P沟道, 5.3 A, 60 V, 0.046 ohm, 10 V, 1 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 300 mA, 60 V, 2.8 ohm, 10 V, 2 V
(EN)
ROHM
晶体管 双极预偏置/数字, AEC-Q101, 单路PNP, -50 V, -100 mA, 10 kohm, 10 kohm, 1 电阻比率
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 14 A, 50 V, 100 mohm, 5 V, 2 V
(EN)ON SEMICONDUCTOR
单晶体管 双极, 通用, NPN, 45 V, 100 MHz, 300 mW, 500 mA, 100 hFE
(EN)
VISHAY
晶体管, MOSFET, N沟道, 35 A, 20 V, 0.003 ohm, 10 V, 1 V
(EN)DIODES INC.
双路场效应管, MOSFET, 双P沟道, -7.6 A, -40 V, 0.018 ohm, -10 V, -1.3 V
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, N和P沟道, 2.9 A, 20 V, 0.058 ohm, 4.5 V, 600 mV
(EN)
