产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
NEXPERIA
单晶体管 双极, PNP, -80 V, 100 MHz, 700 mW, -4.5 A, 280 hFE
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 12 A, 600 V, 0.32 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 20 V, 0.0032 ohm, 4.5 V, 800 mV
(EN)
VISHAY
双路场效应管, MOSFET, N和P沟道, 10 A, 40 V, 0.0145 ohm, 10 V, 800 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 27 A, 150 V, 0.041 ohm, 10 V, 3.1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 32 A, 100 V, 0.036 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 3.9 A, 200 V, 0.059 ohm, 10 V, 2.9 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, NPN, 60 V, 100 MHz, 225 mW, 500 mA, 100 hFE
(EN)
NEXPERIA
单晶体管 双极, 开关, PNP, -40 V, 250 MHz, 250 mW, -200 mA, 100 hFE
(EN)INFINEON
晶体管, MOSFET, N沟道, 56 A, 75 V, 0.0095 ohm, 10 V, 3.7 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0012 ohm, 10 V, 1.4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 65 A, 30 V, 10 mohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.1 A, 55 V, 0.065 ohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.8 A, 20 V, 0.017 ohm, 4.5 V, 950 mV
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 20 A, 30 V, 0.023 ohm, 5 V, 1.6 V
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 8 A, 30 V, 0.0125 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -2.2 A, -20 V, 0.1 ohm, -4.5 V, -1 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 7.1 A, 12 V, 0.015 ohm, 4.5 V, 800 mV
(EN)INFINEON
晶体管, MOSFET, P沟道, 13 A, -150 V, 295 mohm, -10 V, -4 V
(EN)MICROCHIP
晶体管, MOSFET, N沟道, 72 mA, 350 V, 35 ohm, 0 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 24 A, 60 V, 0.019 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, NPN, 100 V, 120 MHz, 1.5 W, 2 A, 200 hFE
(EN)
DIODES INC.
双极晶体管阵列, 双路, NPN, 40 V, 200 mW, 200 mA, 100 hFE, SOT-363
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.011 ohm, 10 V, 1.2 V
(EN)
NEXPERIA
单晶体管 双极, NPN, 45 V, 100 MHz, 250 mW, 100 mA, 200 hFE
(EN)
