产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
ON SEMICONDUCTOR
单晶体管 双极, AEC-Q101, PNP, 40 V, 100 MHz, 2 W, -3 A, 220 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 80 V, 1.25 W, 1.5 A, 100 hFE
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 4.5 A, 60 V, 0.092 ohm, 10 V, 2.6 V
(EN)
DIODES INC.
双路场效应管, MOSFET, 双P沟道, -130 mA, -50 V, 10 ohm, -5 V, -1.6 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -90 A, -30 V, 0.0033 ohm, -10 V, -1.5 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -3.6 A, -200 V, 1.5 ohm, -10 V, -4 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 34 A, 100 V, 0.0121 ohm, 10 V, 2 V
(EN)
DIODES INC.
双路场效应管, MOSFET, N和P沟道, 21 A, 30 V, 0.0095 ohm, 10 V, 2 V
(EN)
TEXAS INSTRUMENTS
单晶体管 双极, NPN, 36 V, 100 mA
(EN)
ON SEMICONDUCTOR
单晶体管 双极, NPN, 40 V, 215 MHz, 2 W, 3 A, 100 hFE
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 450 mA, 60 V, 1 ohm, 10 V, 1.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -40 V, 250 MHz, 250 mW, -200 mA, 30 hFE
(EN)
ON SEMICONDUCTOR
单晶体管 双极, NPN, 50 V, 150 MHz, 500 mW, 3 A, 140 hFE
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 52 A, 40 V, 0.0088 ohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 18 A, 100 V, 0.0189 ohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.1 A, 500 V, 1.26 ohm, 13 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 24 A, 150 V, 0.082 ohm, 10 V, 5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 50 A, 30 V, 0.00165 ohm, 10 V, 1.1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 42 A, 55 V, 0.027 ohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 10 A, 100 V, 0.185 ohm, 10 V, 1 V
(EN)
ROHM
晶体管 双极预偏置/数字, AEC-Q101, 单路PNP, -50 V, -100 mA, 10 kohm, 10 kohm, 1 电阻比率
(EN)
ROHM
晶体管, MOSFET, AEC-Q101, P沟道, -2.5 A, -20 V, 0.07 ohm, -4.5 V, -2 V
(EN)ROHM
单晶体管 双极, NPN, 50 V, 250 MHz, 200 mW, 50 mA, 820 hFE
(EN)
INFINEON
射频晶体管, NPN, 42GHZ, 4.7V, SOT-343
(EN)
VISHAY
晶体管, MOSFET, N沟道, 10 A, 400 V, 0.5 ohm, 10 V, 5 V
(EN)
