产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
DIODES INC.
单晶体管 双极, NPN, 12 V, 260 MHz, 300 mW, 500 mA, 270 hFE
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 700 mA, 450 V, 9.3 ohm, 10 V, 4.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 2.8 A, 60 V, 0.12 ohm, 10 V, 1.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 200 A, 60 V, 0.0017 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管 双极-射频, PNP, -40 V, 325 MHz, 250 mW, -25 mA, 50 hFE
(EN)
STMICROELECTRONICS
单晶体管 双极, 通用, NPN, 15 V, 500 mW, 2 A, 280 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 13 A, 30 V, 7.4 mohm, 10 V, 1.7 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 5.2 A, 650 V, 1.35 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 250 mA, 30 V, 1 ohm, 4 V, 1.2 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 160 mA, 50 V, 3.1 ohm, 4 V, 800 mV
(EN)INFINEON
晶体管, MOSFET, N沟道, 13 A, 30 V, 0.011 ohm, 10 V, 3 V
(EN)
DIODES INC.
双极晶体管阵列, 双路, NPN, PNP, 160 V, 200 mW, 200 mA, 80 hFE, SOT-363
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 5.1 A, 900 V, 1.2 ohm, 10 V, 3 V
(EN)
NEXPERIA
单晶体管 双极, 双PNP, -60 V, 100 MHz, 2 W, -2 A, 50 hFE
(EN)NEXPERIA
单晶体管 双极, NPN, 50 V, 100 MHz, 250 mW, 100 mA, 90 hFE
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 8 A, 600 V, 0.57 ohm, 10 V, 4 V
(EN)
INFINEON
二极管, 射频/PIN, AEC-Q101, 单, 1 ohm, 50 V, SC-79, 2引脚, 0.21 pF
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 7.5 A, 150 V, 0.0173 ohm, 10 V, 2.7 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 44 A, 30 V, 0.0056 ohm, 10 V, 1.6 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -9 A, -20 V, 0.085 ohm, -1.8 V, -400 mV
(EN)DIODES INC.
单晶体管 双极, PNP, 400 V, 50 MHz, 2 W, -500 mA, 50 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 电源沟槽, 双N沟道, 103 A, 40 V, 0.002 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 10.5 A, 500 V, 0.33 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管 双极-射频, NPN, 4.5 V, 40 GHz, 200 mW, 50 mA, 110 hFE
(EN)DIODES INC.
晶体管, MOSFET, 低电压, N沟道, 2.2 A, 20 V, 120 mohm, 4.5 V, 700 mV
(EN)
