产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 750 mA, 20 V, 0.075 ohm, 10 V, 1.7 V
(EN)
ROHM
晶体管 双极预偏置/数字, AEC-Q101, 单路PNP, -50 V, -100 mA, 10 kohm, 10 kohm, 1 电阻比率
(EN)
DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -35 mA, -200 V, 80 ohm, -10 V, -1.5 V
(EN)
NEXPERIA
单晶体管 双极, NPN, 100 V, 110 MHz, 700 mW, 5.1 A, 30 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 10 A, 100 V, 185 mohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
Bipolar Transistor Array, Dual PNP, -45 V, 380 mW, -100 mA, 220 hFE, SOT-363
(EN)DIODES INC.
单晶体管 双极, NPN, 400 V, 40 MHz, 1.5 W, 500 mA, 180 hFE
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 4.5 A, 650 V, 0.85 ohm, 10 V, 3 V
(EN)
VISHAY
双路场效应管, MOSFET, N和P沟道, 1.2 A, 20 V, 0.132 ohm, 4.5 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -12 A, -20 V, 0.0067 ohm, -4.5 V, -900 mV
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 3.2 A, 600 V, 1.26 ohm, 10 V, 3 V
(EN)
NEXPERIA
单晶体管 双极, 通用, PNP, -45 V, 100 MHz, 250 mW, -100 mA, 125 hFE
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 5.9 A, 30 V, 0.022 ohm, 10 V, 1.3 V
(EN)
DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -2.6 A, -100 V, 0.15 ohm, -10 V, -2 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 1.8 A, 400 V, 3 ohm, 10 V, 3.75 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -90 A, -40 V, 0.0075 ohm, -10 V
(EN)
NEXPERIA
单晶体管 双极, NPN, 80 V, 1.35 W, 1 A, 100 hFE
(EN)
INFINEON
晶体管, MOSFET, P沟道, -11 A, -55 V, 0.175 ohm, -10 V, -4 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -18 A, -55 V, 110 mohm, -10 V, -4 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, NPN, 32 V, 300 mW, 100 mA, 420 hFE
(EN)NEXPERIA
单晶体管 双极, NPN, 140 V, 300 MHz, 250 mW, 300 mA, 60 hFE
(EN)INFINEON
晶体管, MOSFET, N沟道, 80 A, 100 V, 0.007 ohm, 10 V, 2.7 V
(EN)
ROHM
晶体管, MOSFET, 低电压, N沟道, 9 A, 30 V, 11 mohm, 10 V, 2.5 V
(EN)ROHM
晶体管, MOSFET, AEC-Q101, P沟道, -2 A, -45 V, 0.13 ohm, -10 V, -3 V
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双P沟道, -1.6 A, -20 V, 0.056 ohm, -4.5 V, -800 mV
(EN)
