产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
DIODES INC.
双路场效应管, MOSFET, 半桥接, N和P沟道, 3.98 A, 30 V, 0.033 ohm, 10 V, 1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -8.2 A, -40 V, 0.022 ohm, -10 V, -1.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 16 A, 250 V, 220 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 2.3 A, 150 V, 0.113 ohm, 10 V, 2.5 V
(EN)
DIODES INC.
单晶体管 双极, PNP, -80 V, 120 MHz, 1.5 W, -4.3 A, 250 hFE
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4 A, 950 V, 3 ohm, 10 V, 4 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 2 A, 60 V, 350 mohm, 5 V, 1 V
(EN)
PANASONIC ELECTRONIC COMPONENTS
晶体管, MOSFET, P沟道, -100 mA, -30 V, 4 ohm, -4 V, -1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 50 A, 30 V, 0.0042 ohm, 10 V, 2.2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.003 ohm, 10 V, 1.2 V
(EN)
MULTICOMP
单晶体管 双极, 达林顿, NPN, 30 V, 625 mW, 500 mA, 20000 hFE
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 72 A, 100 V, 0.0102 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 9 A, 30 V, 0.0082 ohm, 10 V, 1.2 V
(EN)
RENESAS
晶体管, MOSFET, N沟道, 23 A, 100 V, 13 mohm, 10 V
(EN)
NEXPERIA
单晶体管 双极, 通用, NPN, 300 V, 250 mW, 100 mA, 40 hFE
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 36 A, 100 V, 0.019 ohm, 10 V, 3.1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 40 A, 100 V, 0.02 ohm, 10 V, 1.85 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 3 A, 500 V, 2.6 ohm, 10 V, 3 V
(EN)
INFINEON
双路场效应管, MOSFET, N和P沟道, 4 A, 30 V, 0.05 ohm, 10 V, 1 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, 1.6 A, -100 V, 350 mohm, -10 V, -2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 400 mA, 200 V, 1.6 ohm, 10 V, 2.8 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 60 V, 1970 μohm, 10 V, 3 V
(EN)
INFINEON
晶体管 双极-射频, NPN, 2.25 V, 80 GHz, 75 mW, 35 mA, 150 hFE
(EN)
ON SEMICONDUCTOR
单晶体管 双极, PNP, -40 V, 100 MHz, 710 mW, -2 A, 150 hFE
(EN)
ROHM
双路场效应管, MOSFET, 双N沟道, 1 A, 30 V, 364 mohm, 4.5 V, 1.5 V
(EN)
