ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -2.4 A, -20 V, 0.07 ohm, -4.5 V, -0.72 V
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 400 V, 625 mW, 300 mA, 50 hFE
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 4.5 A, -20 V, 0.039 ohm, 12 V, -800 mV
INFINEON
功率场效应管, MOSFET, N沟道, 7.3 A, 600 V, 0.54 ohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, N沟道, 5.2 A, 55 V, 0.045 ohm, 10 V, 4 V
VISHAY
双路场效应管, MOSFET, N和P沟道, 6.7 A, 20 V, 0.18 ohm, 4.5 V, 600 mV
NEXPERIA
晶体管, MOSFET, N沟道, 5.5 A, 30 V, 0.017 ohm, 10 V, 1.5 V
MULTICOMP
单晶体管 双极, NPN, 300 V, 625 mW, 500 mA, 40 hFE
INFINEON
功率场效应管, MOSFET, N沟道, 17 A, 800 V, 0.24 ohm, 10 V, 3 V
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0035 ohm, 10 V, 1.8 V
VISHAY
晶体管, MOSFET, N沟道, 33 A, 30 V, 0.006 ohm, 10 V, 1.2 V
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 7 A, 600 V, 0.53 ohm, 10 V, 5 V
VISHAY
晶体管, MOSFET, N沟道, 32 A, 60 V, 0.0083 ohm, 10 V, 2 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 5.8 A, 100 V, 0.275 ohm, 10 V, 2 V
BROADCOM LIMITED
二极管, 射频/PIN, 限制器, 单, 0.6 ohm, 50 V, SOT-323, 3引脚, 1.2 pF
NEXPERIA
晶体管, MOSFET, N沟道, 9.4 A, 100 V, 0.104 ohm, 10 V, 3 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 58 A, 30 V, 0.007 ohm, 10 V, 2.5 V
ON SEMICONDUCTOR
单晶体管, IGBT, 20 A, 1.7 V, 72 W, 600 V, TO-252, 3 引脚
INFINEON
晶体管, MOSFET, N沟道, 4.8 A, 500 V, 1.26 ohm, 13 V, 3 V
NEXPERIA
双极晶体管阵列, PNP, -45 V, 380 mW, -100 mA, 290 hFE, SOT-457
NEXPERIA
晶体管, MOSFET, N沟道, 75 A, 60 V, 4580 μohm, 10 V, 3 V
VISHAY
晶体管, MOSFET, N沟道, 30 A, 100 V, 0.0195 ohm, 10 V, 1.5 V
INFINEON
晶体管, MOSFET, N沟道, 30 A, 80 V, 0.0225 ohm, 10 V, 2.5 V
INFINEON
功率场效应管, MOSFET, N沟道, 6.8 A, 600 V, 0.9 ohm, 10 V, 3 V
ON SEMICONDUCTOR
单晶体管 双极, 通用, PNP, 100 V, 3 MHz, 15 W, 3 A, 10 hFE