NEXPERIA
晶体管, MOSFET, TrenchMOS, N沟道, 86 A, 60 V, 0.006 ohm, 10 V, 1.7 V
DIODES INC.
晶体管, MOSFET, P沟道, -130 mA, -50 V, 10 ohm, -5 V, -1.6 V
STMICROELECTRONICS
单晶体管 双极, PNP, 300 V, 15 W, -500 mA, 30 hFE
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 600 mA, 20 V, 700 mohm, 4.5 V, 600 mV
VISHAY
功率场效应管, MOSFET, N沟道, 6 A, 620 V, 0.78 ohm, 10 V
VISHAY
晶体管, MOSFET, P沟道, -9.7 A, -30 V, 0.0088 ohm, -10 V, -1.4 V
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5.5 A, 620 V, 0.95 ohm, 10 V, 3.75 V
INFINEON
晶体管, MOSFET, N沟道, 89 A, 55 V, 8 mohm, 10 V, 3 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 300 mA, 60 V, 2 ohm, 10 V, 2.5 V
INFINEON
晶体管, MOSFET, N沟道, 18 A, 30 V, 4.8 mohm, 10 V, 1.8 V
NEXPERIA
双极晶体管阵列, 通用, NPN, PNP, 40 V, 370 mW, -1 A, 300 hFE, SOT-457
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 11 A, -30 V, 14 mohm, -10 V, -1.7 V
INFINEON
射频晶体管, NPN, 42GHZ, 4.7V, SOT-343
ON SEMICONDUCTOR
单晶体管 双极, 通用, PNP, -80 V, 50 MHz, 1.5 W, -1.5 A, 250 hFE
DIODES INC.
晶体管, MOSFET, AEC-Q101, P沟道, -820 mA, -20 V, 0.5 ohm, -4.5 V, -1 V
VISHAY
晶体管, MOSFET, P沟道, -3.6 A, -60 V, 54 mohm, -10 V, -1 V
INFINEON
晶体管, MOSFET, N沟道, 100 A, 80 V, 0.0034 ohm, 10 V, 3 V
DIODES INC.
单晶体管 双极, PNP, 500 V, 60 MHz, 500 mW, 150 mA, 100 hFE
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0078 ohm, 10 V, 3.6 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 11.6 A, 30 V, 0.0079 ohm, 10 V, 2.5 V
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 40 V, 300 MHz, 227 mW, 200 mA, 30 hFE
ON SEMICONDUCTOR
单晶体管 双极, NPN, 100 V, 1.75 W, 8 A, 2500 hFE
ON SEMICONDUCTOR
双极晶体管阵列, NPN, 65 V, 380 mW, 100 mA, 200 hFE, SOT-363
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, 小信号, NPN, 45 V, 300 MHz, 500 mW, 100 mA, 420 hFE
INFINEON
晶体管, MOSFET, N沟道, 39 A, 30 V, 10 mohm, 10 V, 1 V