产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
ON SEMICONDUCTOR
单晶体管 双极, 达林顿, PNP, -100 V, 4 MHz, 20 W, -8 A, 100 hFE
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -1.3 A, -20 V, 0.14 ohm, -4.5 V, -1 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 24 A, 650 V, 0.12 ohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 22 A, 60 V, 0.026 ohm, 10 V, 1.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 50 A, 20 V, 7.5 mohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 7.5 A, 30 V, 0.017 ohm, 10 V, 1.7 V
(EN)DIODES INC.
晶体管, MOSFET, P沟道, -50 A, -30 V, 0.0057 ohm, -10 V, -1.6 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -90 A, -40 V, 0.0036 ohm, -10 V, -1.7 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 6.7 A, 150 V, 0.041 ohm, 10 V, 4.5 V
(EN)
NEXPERIA
单晶体管 双极, PNP, 40 V, 550 mW, 5 A, 250 hFE
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 32 A, 55 V, 6.5 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -5.5 A, -30 V, 0.031 ohm, -10 V, -1.5 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -2 A, -30 V, 0.115 ohm, -10 V, -2.6 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 50 A, 40 V, 0.0085 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 3 A, 30 V, 0.054 ohm, 10 V, 1.5 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 2.5 A, 30 V, 140 mohm, 4.5 V, 1.75 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 6 A, 650 V, 0.594 ohm, 10 V, 4 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 60 A, 25 V, 0.0042 ohm, 4.5 V, 1.7 V
(EN)
TEXAS INSTRUMENTS
双极晶体管阵列, NPN, 50 V, 950 mW, 500 mA, SOIC
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -2.9 A, -30 V, 0.095 ohm, -10 V, -1.8 V
(EN)
NXP
二极管, 射频/PIN, 单, 0.35 ohm, 30 V, SOD-323, 2引脚, 0.375 pF
(EN)DIODES INC.
单晶体管 双极, PNP, 300 V, 50 MHz, 330 mW, 200 mA, 40 hFE
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 1.9 A, 800 V, 2.4 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 23 A, 40 V, 0.02 ohm, 10 V, 2.5 V
(EN)
NEXPERIA
单晶体管 双极, 通用, NPN, 45 V, 100 MHz, 250 mW, 500 mA, 100 hFE
(EN)
