产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
INFINEON
晶体管, MOSFET, N沟道, 17 A, 100 V, 0.105 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -12 A, -60 V, 0.155 ohm, -10 V, -2.8 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 35 A, 30 V, 1.2 mohm, 8 V, 1.1 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, NPN, 40 V, 150 MHz, 540 mW, 4 A, 370 hFE
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -5.7 A, -20 V, 0.041 ohm, -4.5 V, -1 V
(EN)
NEXPERIA
单晶体管 双极, NPN, 40 V, 200 MHz, 1.15 W, 600 mA, 100 hFE
(EN)
DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -5 A, -30 V, 0.045 ohm, -10 V, -1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 35 A, 25 V, 0.0116 ohm, 10 V, 1.5 V
(EN)
DIODES INC.
双路场效应管, MOSFET, 双N沟道, 1.8 A, 60 V, 0.15 ohm, 5 V, 1 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 24 A, 60 V, 0.034 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 10.5 A, 700 V, 0.54 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 101 A, 40 V, 0.0036 ohm, 10 V, 3.5 V
(EN)
NEXPERIA
双极晶体管阵列, NPN, 30 V, 250 mW, 100 mA, 110 hFE, SOT-143
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 3.6 A, 30 V, 0.048 ohm, 4.5 V, 800 mV
(EN)ON SEMICONDUCTOR
单晶体管 双极, NPN, 100 V, 120 MHz, 33 W, 3 A, 80 hFE
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 95 A, 30 V, 0.0043 ohm, 11.5 V, 2.5 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 46 A, 60 V, 0.013 ohm, 10 V, 2 V
(EN)DIODES INC.
单晶体管 双极, NPN, 45 V, 150 MHz, 3 W, 3 A, 500 hFE
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 3.2 A, 12 V, 0.034 ohm, 4.5 V, 650 mV
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0013 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 90 A, 30 V, 0.0033 ohm, 10 V, 2.2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -40 V, 200 MHz, 625 mW, -600 mA, 20 hFE
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3 A, -12 V, 0.054 ohm, -4.5 V, -1.4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 5.4 A, 700 V, 1.26 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 90 A, 40 V, 0.0027 ohm, 10 V, 3 V
(EN)
