产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -40 V, 100 MHz, 2 W, -3 A, 150 hFE
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 32 A, 30 V, 0.017 ohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -4 A, -20 V, 0.045 ohm, -4.5 V, -600 mV
(EN)
ROHM
晶体管, MOSFET, AEC-Q101, N沟道, 1 A, 100 V, 0.37 ohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, 3 A, -30 V, 170 mohm, -10 V, -1.8 V
(EN)
INFINEON
晶体管 双极-射频, NPN, 3.25 V, 57 GHz, 120 mW, 40 mA, 150 hFE
(EN)
ON SEMICONDUCTOR
双极晶体管阵列, 通用, NPN, 45 V, 380 mW, 100 mA, 450 hFE, SOT-363
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 7 A, 30 V, 0.019 ohm, 10 V, 1.9 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 80 V, 100 MHz, 625 mW, 500 mA, 100 hFE
(EN)
VISHAY
晶体管, MOSFET, N沟道, 3 A, 150 V, 68 mohm, 10 V, 2 V
(EN)
NEXPERIA
单晶体管 双极, NPN, 80 V, 180 MHz, 500 mW, 1 A, 100 hFE
(EN)
NEXPERIA
单晶体管 双极, NPN, 80 V, 180 MHz, 650 mW, 1 A, 63 hFE
(EN)DIODES INC.
晶体管, MOSFET, P沟道, -3.3 A, -20 V, 0.06 ohm, -4.5 V, -600 mV
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -4.5 A, -20 V, 0.027 ohm, -4.5 V, -700 mV
(EN)
ROHM
晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 22 kohm, 22 kohm, 1 电阻比率
(EN)
ON SEMICONDUCTOR
单晶体管 双极, NPN, 60 V, 390 MHz, 15 W, 3 A, 300 hFE
(EN)INFINEON
晶体管, MOSFET, N沟道, 9 A, 500 V, 0.59 ohm, 13 V, 3 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -11.4 A, -30 V, 10 mohm, -10 V, -2.5 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 2.4 A, 30 V, 0.045 ohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 87 A, 150 V, 0.0079 ohm, 10 V, 3.8 V
(EN)
ROHM
晶体管 双极预偏置/数字, AEC-Q101, 单路NPN, 50 V, 100 mA, 2.2 kohm, 10 kohm, 0.22 电阻比率
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 3 A, 100 V, 220 mohm, 10 V, 4 V
(EN)
ROHM
晶体管 双极预偏置/数字, AEC-Q101, 单路NPN, 50 V, 100 mA, 2.2 kohm, 47 kohm, 0.04 电阻比率
(EN)
VISHAY
晶体管, MOSFET, N沟道, 60 A, 60 V, 0.005 ohm, 10 V, 2.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 6.2 A, 20 V, 0.021 ohm, 4.5 V, 800 mV
(EN)
