产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 25 V, 50 MHz, 350 mW, 100 mA, 400 hFE
(EN)
VISHAY
双路场效应管, MOSFET, 双P沟道, -3.2 A, -60 V, 0.051 ohm, -10 V, -3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0009 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 2.3 A, 100 V, 0.2 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR
单晶体管 双极, NPN, 45 V, 100 MHz, 225 mW, 100 mA, 200 hFE
(EN)ON SEMICONDUCTOR
晶体管 双极预偏置/数字, 单路PNP, 50 V, 100 mA, 10 kohm, 10 kohm, 1 电阻比率
(EN)
INFINEON
晶体管, MOSFET, N沟道, 11 A, 30 V, 0.0093 ohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.1 A, 55 V, 0.065 ohm, 10 V, 2 V
(EN)
DIODES INC.
单晶体管 双极, POWERDI?5, NPN, 60 V, 130 MHz, 3.2 W, 6 A, 200 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -3 A, -60 V, 105 mohm, -10 V, -1.6 V
(EN)
INFINEON
单晶体管, IGBT, 11 A, 3.17 V, 60 W, 1.2 kV, TO-263, 3 引脚
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 335 mA, 55 V, 2.3 ohm, 4.5 V, 1 V
(EN)
ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, PNP, -100 V, 120 MHz, 490 mW, -2 A, 50 hFE
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 30 V, 950 μohm, 10 V, 1.4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 21 A, 30 V, 28 mohm, 10 V, 1.7 V
(EN)
NEXPERIA
单晶体管 双极, NPN, PNP, -60 V, 150 MHz, 480 mW, -1.5 A, 285 hFE
(EN)VISHAY
晶体管, MOSFET, N沟道, 19 A, 200 V, 90 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0012 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 85 A, 40 V, 0.0018 ohm, 10 V, 2.2 V
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双P沟道, -1.5 A, -30 V, 0.458 ohm, -4 V, -2.6 V
(EN)
NEXPERIA
单晶体管 双极, NPN, 80 V, 110 MHz, 700 mW, 5.1 A, 470 hFE
(EN)
ROHM
晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 2.2 kohm, 2.2 kohm, 1 电阻比率
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -3.2 A, -12 V, 0.059 ohm, -4.5 V, -680 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 160 A, 30 V, 3.1 mohm, 10 V, 1.9 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -100 A, -30 V, 0.0041 ohm, -10 V, -2.5 V
(EN)
