产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -2 A, -30 V, 0.165 ohm, -4 V, -1.3 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N和P沟道, 8 V, 0.04 ohm, 4.5 V, 1.2 V
(EN)
ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, NPN, 80 V, 100 MHz, 225 mW, 500 mA, 100 hFE
(EN)
ROHM
晶体管 双极预偏置/数字, AEC-Q101, 单路NPN, 50 V, 100 mA, 4.7 kohm, 10 kohm, 0.47 电阻比率
(EN)
INFINEON
晶体管, MOSFET, N沟道, 1.2 A, 20 V, 0.25 ohm, 4.5 V, 700 mV
(EN)
ON SEMICONDUCTOR
双极晶体管阵列, AEC-Q101, 双NPN, 65 V, 380 mW, 100 mA, 300 hFE, SOT-363
(EN)
NEXPERIA
双极晶体管阵列, 通用, 双PNP, -65 V, 220 mW, -100 mA, 110 hFE, SOT-363
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 6.5 A, 20 V, 21 mohm, 4.5 V, 500 mV
(EN)
NEXPERIA
单晶体管 双极, PNP, -60 V, 145 MHz, 1.65 W, -1 A, 40 hFE
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 3.7 A, 600 V, 1.89 ohm, 10 V, 3 V
(EN)
INFINEON
双路场效应管, MOSFET, 双P沟道, 4.9 A, -30 V, 58 mohm, -10 V, -1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, JFET, JFET, -35 V, 2 mA, -3 V, SOT-23, JFET
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 75 A, 80 V, 8300 μohm, 5 V, 1.7 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 8.8 A, 80 V, 16.5 mohm, 10 V, 3.2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3.5 A, -30 V, 0.075 ohm, -10 V, -2.6 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 7.4 A, 700 V, 0.9 ohm, 10 V, 3 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 24 A, 650 V, 0.12 ohm, 10 V, 2 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 2 A, 600 V, 4.4 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -6 A, -30 V, 0.033 ohm, -10 V
(EN)
ROHM
晶体管 双极预偏置/数字, AEC-Q101, 单路NPN, 50 V, 100 mA, 4.7 kohm, 10 kohm, 0.47 电阻比率
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 4.4 A, 100 V, 0.044 ohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管 双极预偏置/数字, BRT, 双路 NPN, 50 V, 100 mA, 10 kohm
(EN)
ROHM
双极晶体管阵列, AEC-Q101, 双PNP, -50 V, 150 mW, -150 mA, 120 hFE, SC-88
(EN)
NXP
二极管, 射频/PIN, 单, 1.4 ohm, 50 V, SOD-523, 2引脚, 0.25 pF
(EN)
VISHAY
晶体管, MOSFET, N沟道, 36 A, 40 V, 0.0027 ohm, 10 V, 2.5 V
(EN)
